Abstract:A possible way to realize a 22.5 nm 1⁄2 pitch and beyond BEOL interconnect structures within the low-k material is the partial-trench via first with self-aligned double patterning (SADP) integration approach. A scheme of this BEOL integration stack with the different materials used after patterning is described in Figure 1. In BEOL processing, fluorocarbon-containing plasma is commonly used to pattern silica-based dielectric layers. During the patterning of the low-k dielectric layer, a thin layer of fluoropolymer (CFx-type residues) is intentionally deposited on the dielectric sidewalls and TiN hardmask to ensure anisotropic etching and prevent/minimize dielectric degradation. This polymer layer must be removed from the sidewall and the via bottom prior to the subsequent processing steps to achieve good adhesion and coverage of materials deposited in the etched features. The compatibility requirement is even more stringent for advanced low-k dielectrics, i.e. materials with lower k-value and higher porosity. The post etch residue (PER) amount and properties are specific and depend on the stack structure and the plasma that is used for patterning. The low-k materials and hardmasks that are used in this work are respectively an organo-silicate glass (OSG) type of low-k material with k = 2.4 (~20 % open porosity) and low-stress TiN. Recent results clearly showed the presence of a highly fluorinated layer deposited on the trench sidewalls during the plasma etch based on a fluorocarbon plasma [1-3]. Commodity aqueous cleaning solutions, such as diluted HF, do not efficiently remove the sidewall polymers without etching the underlying layer (lift-off). Therefore, there is a need for commercially available chemicals that can be easily tuned to deal with the different requirements. This study focuses on the use of FOTOPUR® R 2300 mixed with H2O2 for polymer residue removal selectively to other materials (presented in the stack) such as MHM, metals (Cu, W), and porous low-k dielectrics. We will show that TiN etch can be easily tuned by changing the concentration of H2O2.

The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on Cleaning of Post-Etch Residues

Research on Integrated Trench Etching for Trench-Type Power MOSFET

Investigation of Amorphous Silicon As Dry Etch Hard Mask in BEOL Low-k Dielectric Patterning

A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections

Optimization of Wet strip after Metal Hard Mask All-in-One Etch for metal void reduction and yield improvement

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries

Contact Vs. Non-Contact Cleaning: Correlating Interfacial Reaction Mechanisms to Processing Methodologies for Enhanced FEOL/BEOL Post-CMP Cleaning

Effective Approaches to Improve Au Etching Process Performance in MEMS Devices

The Defect Reduction of Via Opens by the Integration of Inter-Metal-Dielectric Film, Metal Hard Mask, and All-in-One Etch Processes

Industrial Challenges of TiN Hard Mask Wet Removal Process for 14nm Technology Node

Study of Plug Etch back process matching on faraday shielded ICP and traditional CCP plasma ETCH chambers

Wafer Edge Process Integration and Defect Inspection with the Immersion Lithography Process

Etching Kinetics of III–V Semiconductors Coupled with Surface Passivation Investigated by Scanning Electrochemical Microscopy

Methods of Reducing Metal Damager Defect in Back End of Line for Semiconductor in 28nm Technology

Eliminating arsenic containing residue that create killer defects in 20 nm HVM

Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Etching Chemistry Process Optimization of Ethylene Diluted with Helium (C2H4/He) in Interconnect Integration

Step Coverage and Dry Etching Process Improvement of Amorphous Carbon Hard Mask

A spin-on photosensitive polymeric etch protection mask for anisotropic wet etching of silicon

Understanding Etch Properties of Advanced Chemically Amplified EUV Resist