Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Properties of Hydorogenated Al-Doped ZnO Films by Multi-Step Texture

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Tailoring of Textured ZnO: Al Film Via Hydrogen

The properties of surface textured ZnO:Al films grown in hydrogen atmosphere

Effect of Al-doped on Optics and Electricity of ZnO (ZnO∶Al) Thin Films

Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates

Influence of Hydrogen on Al-doped ZnO Thin Films in the Process of Deposition and Annealing

Modification of Structure and Properties of AZO Thin Film by Introducing H2 in Sputtering Atmosphere at Low Substrate Temperature

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Development of Natively Textured Hydrogenated Ga-doped ZnO-TCO Thin Films for Solar Cells Via Magnetron Reactive Sputtering

Surface morphology and light trapping properties of textured ZnO films

Growth and Characteristics of Hydrogenated Ga-doped ZnO Thin Films by Pulsed DC Magnetron Sputtering at Room Temperature

Effects of hydrogen treatment and substrate temperatures on the properties of Al-doped ZnO films

The XPS Spectra and Optical Properties of Al Doped ZnO Thin Films

Textured Surface Aluminum-Doped Zinc Oxide Thin Films Prepared by Direct Current Magnetron Sputtering

Properties of Texture-etched ZnO∶Al Substrates

Investigation of Structural, Electrical, and Optical Properties for Al-Doped ZnO Films Deposited at Different Substrate Temperatures and H2Ratios

The properties of Al doped ZnO thin films deposited on various substrate materials by RF magnetron sputtering

Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Optical and structural properties of Al-doped ZnO thin films by sol gel process

Optical property of Al doped ZnO thin films