Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Influence of Hydrogen on Al-doped ZnO Thin Films in the Process of Deposition and Annealing

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Highly conductive and transparent Al-doped ZnO films on glass substrate via incorporating hydrogen at low substrate temperatures

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Ellipsometric Study on Optical Properties of Hydrogen Plasma-Treated Aluminum-Doped ZnO Thin Film

The properties of surface textured ZnO:Al films grown in hydrogen atmosphere

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Sol–gel deposition of Al-doped ZnO thin films: effect of additional zinc supply

Influence of Al Doping on the Properties of Zno Thin Films Grown by Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Tailoring of Optical and Electrical Properties of Transparent and Conductive Al-doped ZnO Films by Adjustment of Al Concentration

Atomic layer deposition of Al-doped ZnO films using aluminum isopropoxide as the Al precursor

Transparent Conductive Al-Doped Zno Thin Films Grown at Room Temperature

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

Properties of Hydorogenated Al-Doped ZnO Films by Multi-Step Texture

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

Study the characterization of ZnO and AZO films prepared by spray pyrolysis and the effect of annealing temperature

Thermal annealing effect on optical properties of electrodeposited ZnO thin films