Abstract:Well‐controlled van der Waals trilayer MoS2 is used as the semiconductor channel, which can successfully address the long‐standing issue of performance degradation from physical‐vapor deposited metal contact, leading to the demonstration of high‐speed MoS2 transistors with a high drain current (589 μA μm−1 at Vds = 1 V) as well as record‐high saturation velocity (4.2 × 106 cm s−1) at room temperature. Two‐dimensional MoS2 field‐effect transistors (FETs) have great potential for next‐generation electronics due to their excellent electronic properties with an atomic thin channel. However, multiple challenges exist for the monolayer MoS2 channel, including interface scattering and ohmic contact. In this work, well‐controlled trilayer MoS2 with high mobility and large single crystals is successfully grown on soda‐lime glass substrates using chemical vapor deposition (CVD), with a lateral size of up to 148 μm, which is the largest reported size to date. A record high on/off ratio of ≈1012 and a high carrier mobility of 62 cm2 V−1 s−1 of trilayer MoS2 FETs are demonstrated, showing notable advantages compared with the monolayer counterpart. The long‐standing issue of monolayer MoS2 performance degradation from physical vapor deposited metal contact can be mitigated by the trilayer MoS2 channel, achieving the lowest contact resistance of 350 Ω μm using the common method of e‐beam evaporated Ni. Moreover, 40‐nm channel‐length trilayer MoS2 FETs using ultrathin HfLaO dielectrics exhibit a high current of 589 μA μm−1 at a supply voltage of 1 V at room temperature, which increases to 1162 μA μm−1 at 4.3 K, the highest among those using commonly evaporated metal. Record high electron saturation velocity of 4.2 × 106 cm s−1 can be achieved at room temperature.

Electrical Properties of Dual-Gate, Ultrashort Monolayer WS2 Transistors

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors

High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics

Schottky Contact in Monolayer WS2 Field‐Effect Transistors

High-Performance Bilayer WSe2 Pfet with Record Ids = 425 Μa/μm and Gm = 100 at Μs/μm Vds = -1 V by Direct Growth and Fabrication on SiO2 Substrate

Low Resistance Contact to P-Type Monolayer WSe2

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

CVD Monolayer Tungsten-Based PMOS Transistor with High Performance at Vds = -1 V

Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Top-Gate CVD WSe2 Pfets with Record-High Id~594 Μa/μm, Gm~244 Μs/μm and WSe2/MoS2 CFET Based Half-adder Circuit Using Monolithic 3D Integration

Top-Gate CVD WSe2 pFETs with Record-High I-d similar to 594 mu A/mu m, G(m)similar to 244 mu S/mu m and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel