Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Electrical Properties of Dual-Gate, Ultrashort Monolayer WS2 Transistors

Schottky Contact in Monolayer WS2 Field‐Effect Transistors

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

High-Performance Field-Effect-Transistors On Monolayer-WSe2

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Weak interlayer interaction and enhanced electron mobility in multilayer WS2 achieved through a layer-by-layer wet transfer approach

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Insertion Of An Ultrathin Al2o3 Interfacial Layer For Schottky Barrier Height Reduction In Ws2 Field-Effect Transistors