Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

Weak interlayer interaction and enhanced electron mobility in multilayer WS2 achieved through a layer-by-layer wet transfer approach

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Layer-by-layer epitaxy of multilayer MoS2 wafers

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Layer-by-layer Epitaxy of Multi-Layer MoS2 Wafers

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Utilizing a NaOH Promoter to Achieve Large Single-Domain Monolayer WS2 Films Via Modified Chemical Vapor Deposition.

Wafer-scale synthesis of monolayer WS 2 for high-performance flexible photodetectors by enhanced chemical vapor deposition

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing

2d Ws2: From Vapor Phase Synthesis To Device Applications

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering