High-Performance Field-Effect-Transistors On Monolayer-WSe2

Kaustav Banerjee,Wei Liu,Jiahao Kang

DOI: https://doi.org/10.1149/ma2013-02/31/2182

2013-10-27

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Bilu Liu,Yuqiang Ma,Anyi Zhang,Liang Chen,Ahmad N. Abbas,Yihang Liu,Chenfei Shen,Haochuan Wan,Chongwu Zhou

DOI: https://doi.org/10.48550/arXiv.1604.08673

2016-04-29

Materials Science

Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.
High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

Yang Cui,Run Xin,Zhihao Yu,Yiming Pan,Zhun-Yong Ong,Xiaoxu Wei,Junzhuan Wang,Haiyan Nan,Zhenhua Ni,Yun Wu,Tangsheng Chen,Yi Shi,Baigeng Wang,Gang Zhang,Yong-Wei Zhang,Xinran Wang

DOI: https://doi.org/10.1002/adma.201502222

IF: 29.4

2015-01-01

Advanced Materials

Abstract:The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm(2) V(-1) s(-1) (337 cm(2) V(-1) s(-1) ) is reached at room temperature (low temperature) for monolayer WS2 . A theoretical model for electron transport is also developed.
Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Miaomiao Li,Xinyu Zhang,Zimei Zhang,Gang Peng,Zhihong Zhu,Jia Li,Shiqiao Qin,Mengjian Zhu

DOI: https://doi.org/10.1007/s12274-024-6942-5

IF: 9.9

2024-01-01

Nano Research

Abstract:High-performance field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors have demonstrated great promise in post-Moore integrated circuits. However, unipolar p-type 2D semiconductor transistors yet remain challenging and suffer from low saturation current density (less than 10 µA·µm−1) and high contact resistance (larger than 100 kΩ·µm), mainly limited by the Schottky barrier induced by the mismatch of the work-functions and the Fermi level pinning at the metal contact interfaces. Here, we overcome these two obstacles through van der Waals (vdW) integration of high work-function metal palladium (Pd) as the contacts onto monolayer WSe2 grown by chemical vapor deposition (CVD) method. We demonstrate unipolar p-type monolayer WSe2 FETs with superior device performance: room temperature on-state current density exceeding 100 µA·µm−1, contact resistance of 12 kΩ·µm, on/off ratio over 107, and field-effect hole mobility of 103 cm2·V−1·s−1. Electrical transport measurements reveal that the Fermi level pinning effect is completely effectively eliminated in monolayer WSe2 with vdW Pd contacts, leading to a Schottky barrier-free Ohmic contact at the metal-semiconductor junctions. Combining the advantages of large-scale vdW contact strategy and CVD growth, our results pave the way for wafer-scale fabrication of complementary-metal-oxide-semiconductor (CMOS) logic circuits based on atomically thin 2D semiconductors.
High-performance N-Type Transistors Based on CVD-grown Large-Domain Trilayer WSe2

Xin Wang,Xinhang Shi,Chengru Gu,Qi Guo,Honggang Liu,Xuefei Li,Yanqing Wu

DOI: https://doi.org/10.1063/5.0048983

IF: 6.6351

2021-01-01

APL Materials

Abstract:Atomically thin layered tungsten diselenide (WSe2) has attracted tremendous research attention for its potential applications in next-generation electronics. This article reports the synthesis method of high-quality monolayer to trilayer WSe2 by molten-salt-assisted chemical vapor deposition. With the optimization of different types of molten salts and depths of corundum boat, large trilayer WSe2 films can be grown with domain size up to 80 µm for the first time. A systematic study of the electrical properties of the n-type field-effect transistor has been carried out based on WSe2 with the above three different layer thicknesses. The trilayer WSe2 devices exhibit higher drive current, mobility, on/off ratio, and lower contact resistance than both bilayer and monolayer counterparts. Moreover, short channel transistors using the trilayer WSe2 with a channel length of 230 nm have been fabricated, exhibiting an excellent on/off ratio up to 108 and a high current density of 187 µA/μm. This facile synthesis of high-quality large-area multilayer WSe2 provides a pathway for future high-performance two-dimensional electronic devices.
High-performance n-type transistors based on CVD-grown large-domain trilayer WSe 2

Xin Wang,Xinhang Shi,Chengru Gu,Qi Guo,Honggang Liu,Xuefei Li,Yanqing Wu

DOI: https://doi.org/10.1063/5.0048983

IF: 6.6351

2021-07-01

APL Materials

Abstract:Atomically thin layered tungsten diselenide (WSe2) has attracted tremendous research attention for its potential applications in next-generation electronics. This article reports the synthesis method of high-quality monolayer to trilayer WSe2 by molten-salt-assisted chemical vapor deposition. With the optimization of different types of molten salts and depths of corundum boat, large trilayer WSe2 films can be grown with domain size up to 80 µm for the first time. A systematic study of the electrical properties of the n-type field-effect transistor has been carried out based on WSe2 with the above three different layer thicknesses. The trilayer WSe2 devices exhibit higher drive current, mobility, on/off ratio, and lower contact resistance than both bilayer and monolayer counterparts. Moreover, short channel transistors using the trilayer WSe2 with a channel length of 230 nm have been fabricated, exhibiting an excellent on/off ratio up to 108 and a high current density of 187 µA/μm. This facile synthesis of high-quality large-area multilayer WSe2 provides a pathway for future high-performance two-dimensional electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Low Resistance Ohmic Contact to P-type Monolayer WSe2

Jingxu Xie,Zuocheng Zhang,Haodong Zhang,Vikram Nagarajan,Wenyu Zhao,Haleem Kim,Collin Sanborn,Ruishi Qi,Sudi Chen,Salman Kahn,Kenji Watanabe,Takashi Taniguchi,Alex Zettl,Michael Crommie,James Analytis,Feng Wang

2023-12-08

Abstract:Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer doping with WSe$_2$/$\alpha$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole doping as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/\alpha$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $\mu$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $\mu$A$\cdot$ $\mu$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.

Mesoscale and Nanoscale Physics,Materials Science
Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Zixuan Wang,Yecheng Nie,Haohui Ou,Dao Chen,Yingqian Cen,Jidong Liu,Di Wu,Guo Hong,Benxuan Li,Guichuan Xing,Wenjing Zhang

DOI: https://doi.org/10.3390/nano13081368

IF: 5.3

2023-01-01

Nanomaterials

Abstract:Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe2 film using chemical vapor deposition on polycrystalline Au substrates. This method allows for the fabrication of continuous large-area WSe2 film with large-size domains. Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe2. The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe2 FETs with extraordinary electrical performance comparable to those with thermal deposition electrodes, with a high mobility of up to ≈62.95 cm2 V-1 s-1 at room temperature. In addition, the as-fabricated transfer-free devices can maintain their original performance after weeks without obvious device decay. The transfer-free WSe2-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 104 A W-1 at Vds = 1 V and Vg = -60 V and a maximum detectivity value of ~1.2 × 1013 Jones. Our study presents a robust pathway for the growth of high-quality monolayer TMDs thin films and large-scale device fabrication.
Low Resistance Contact to P-Type Monolayer WSe2

Jingxu Xie,Zuocheng Zhang,Haodong Zhang,Vikram Nagarajan,Wenyu Zhao,Ha-Leem Kim,Collin Sanborn,Ruishi Qi,Sudi Chen,Salman Kahn,Kenji Watanabe,Takashi Taniguchi,Alex Zettl,Michael F Crommie,James Analytis,Feng Wang

DOI: https://doi.org/10.1021/acs.nanolett.3c04195

2024-05-22

Abstract:Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. In this study, we develop a charge-transfer doping strategy with WSe2/α-RuCl3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 1013 cm-2 can be achieved in the WSe2/α-RuCl3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe2 transistors with an on-current of 35 μA·μm-1 and an ION/IOFF ratio exceeding 109 at room temperature.
Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Wenchao Chen,Jean-Pierre Leburton,Wen-Yan Yin,Erping Li

DOI: https://doi.org/10.1109/ted.2018.2866505

2018-01-01

Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.
Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Xiaotian Sun,Lin Xu,Yu Zhang,Weizhou Wang,Shiqi Liu,Chen Yang,Zhiyong Zhang,Jing Lu

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:With the scaling limits of silicon-based MOS technology, the critical and challenging issue is to explore more and more alternative materials to improve the performance of devices. Two-dimensional (2D) semiconductor WSe₂ with a proper band gap and inherent stability under ambient conditions makes it a potential channel material for realizing new generation field-effect transistors (FETs). In light of the low on-state current of the experimental sub-10 nm 2D MoS₂ FETs, we explore the limitation of the monolayer (ML) WSe₂ device performance by using accurate ab initio quantum transport simulation. We find that the sub-10 nm 2D WSe₂ FETs apparently outperform their MoS₂ counterpart. The on-state current of the optimized p-type ML WSe₂ FETs can satisfy the criteria of the International Technology Roadmap for Semiconductors (ITRS) on both the high-performance (HP) and low-power (LP) devices until the gate length is scaled down to 2 and 3 nm, respectively. By the aid of the negative capacitance effect, even the 1 nm gate-length WSe₂ MOSFETs can satisfy both the HP and LP requirements in the ITRS 2028 completely. Remarkably, the ML WSe₂ MOSFET has the highest theoretical on-current in LP application among the examined 2D MOSFETs at the 5 nm gate length to the best of our knowledge.
Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Xiaotian Sun,Lin Xu,Yu Zhang,Weizhou Wang,Shiqi Liu,Chen Yang,Zhiyong Zhang,Jing Lu

DOI: https://doi.org/10.1021/acsami.0c01750

2020-05-06

Abstract:With the scaling limits of silicon-based MOS technology, the critical and challenging issue is to explore more and more alternative materials to improve the performance of devices. Two-dimensional (2D) semiconductor WSe2 with a proper band gap and inherent stability under ambient conditions makes it a potential channel material for realizing new generation field-effect transistors (FETs). In light of the low on-state current of the experimental sub-10 nm 2D MoS2 FETs, we explore the limitation of the monolayer (ML) WSe2 device performance by using accurate ab initio quantum transport simulation. We find that the sub-10 nm 2D WSe2 FETs apparently outperform their MoS2 counterpart. The on-state current of the optimized p-type ML WSe2 FETs can satisfy the criteria of the International Technology Roadmap for Semiconductors (ITRS) on both the high-performance (HP) and low-power (LP) devices until the gate length is scaled down to 2 and 3 nm, respectively. By the aid of the negative capacitance effect, even the 1 nm gate-length WSe2 MOSFETs can satisfy both the HP and LP requirements in the ITRS 2028 completely. Remarkably, the ML WSe2 MOSFET has the highest theoretical on-current in LP application among the examined 2D MOSFETs at the 5 nm gate length to the best of our knowledge.
Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors

Zhengdao Xie,Guoli Li,Shengxuan Xia,Chang Liu,Sen Zhang,Zhouxiaosong Zeng,Xingqiang Liu,Denis Flandre,Zhiyong Fan,Lei Liao,Xuming Zou

DOI: https://doi.org/10.1021/acs.nanolett.3c01866

IF: 10.8

2023-07-12

Nano Letters

Abstract:Atomically thin monolayer two-dimensional (2D) semiconductors with natural immunity to short channel effects are promising candidates for sub-10 nm very large-scale integration technologies. Herein, the ultimate limit in optoelectronic performances of monolayer WSe(2) field-effect transistors (FETs) is examined by constructing a sloping channel down to 6 nm. Using a simple scaling method compatible with current micro/nanofabrication technologies, we achieve a record high saturation current up to...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Xue Liu,Jin Hu,Chunlei Yue,Nicholas D. Della Fera,Yun Ling,Zhiqiang Mao,Jiang Wei

DOI: https://doi.org/10.48550/arXiv.1411.4605

2014-11-17

Mesoscale and Nanoscale Physics

Abstract:Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical devices with acceptable performance still remains as a challenge. Employing tungsten disulfide multilayer thin crystals, we demonstrate that using gold as the only contact metal and choosing appropriate thickness of the crystal, high performance transistor with on/off ratio of $10^{8}$ and mobility up to $234\:cm^{2}V^{-1}s^{-1}$ at room temperature can be realized in a simple device structure. Further low temperature study revealed that the high performance of our device is caused by the minimized Schottky barrier at the contact and the existence of a shallow impurity level around 80 meV right below the conduction band edge. From the analysis on temperature dependence of field-effect mobility, we conclude that strongly suppressed phonon scattering and relatively low charge impurity density are the key factors leading to the high mobility of our tungsten disulfide devices.
Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Hong Li,Xinqi Yuan,Jingzhen Li,Kang An,Fengbin Liu,Shuai Sun,Jing Lu

DOI: https://doi.org/10.1021/acsaelm.4c00300

IF: 4.494

2024-01-01

ACS Applied Electronic Materials

Abstract:Achieving Ohmic-contact electrodes for two-dimensional (2D) Schottky barrier field-effect transistors (SBFETs) and symmetric p- and n-type performances are two pivotal aspects of 2D-based integrated circuits. As 2D WSe2 possesses both high electron and hole mobilities, we choose monolayer (ML) WSe2 as the channel and functionalized Nb2C with a similar lattice and a broad scope work function as the electrode. The contact properties and device performances are studied theoretically at the ab initio level. P- and n-type Ohmic contacts are achieved with high- and low-WF metals, i.e., Nb2CO2 and Nb2C(OH)(2), respectively, and the interfaces are both clean without metal-induced gap states. The optimal ML WSe2 SBFETs with Nb2CO2 and Nb2C(OH)(2) electrodes possess symmetric p- and n-type I on values of 1542/1823 and 1688/2173 mu A/mu m, respectively, for low-power/high-performance (LP/HP) applications with a gate length of 3 nm and a supply voltage of 0.5 V, surpassing the International Roadmap for Device and Systems LP/HP target. This study suggested potential Ohmic-contact electrodes for symmetric p- and n-type ML WSe2 SBFETs in the post-Si era.
High performance Bi2Se3 nanowire field-effect transistors

Hao Zhu,Curt A. Richter,Erhai Zhao,John E. Bonevich,Hyuk-Jae Jang,Hui Yuan,Haitao Li,Abbas Arab,Oleg Kirillov,William A. Kimes,James E. Maslar,Qiliang Li

DOI: https://doi.org/10.1109/DRC.2013.6633843

2013-01-01

Abstract:In this paper, we have fabricated Bi2Se3 nanowire FETs by using a self-alignment technique and observed excellent device characteristics. The FETs show unipolar, n-type behavior with a clear cutoff in the OFF-state with only thermally activated conduction at relatively high temperatures, and a well-saturated output current indicating surface metallic conduction. These data illustrate that charge transport in materials associated with topological insulator (TI) systems may be much more complicated than the conventional wisdom that has recently been developed for these novel systems.
Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Qiuhui Li,Jie Yang,Ruge Quhe,Qiaoxuan Zhang,Lin Xu,Yuanyuan Pan,Ming Lei,Jing Lu

DOI: https://doi.org/10.1016/j.carbon.2018.04.043

IF: 10.9

2018-01-01

Carbon

Abstract:Formation of Ohmic contact is crucial for achieving high device performance in two-dimensional (2D) materials based transistors. By using ab initio electronic structure calculations and quantum transport simulations, we reveal the great potential of 2D titanium carbides as the electrode materials for monolayer (ML) WSe2 device. In the vertical direction, both tunnel barrier and Schottky barrier are absent in all the three hybrid heterostructures of ML WSe2/Ti2C and ML WSe2/Ti2CY2 (Y = F and OH), implying a high vertical carrier injection efficiency. In the lateral direction, although pristine Ti2C and ML WSe2 form a Schottky contact with electron barrier of 0.40 eV, Ti2CF2/ML WSe2 and Ti2C(OH)(2)/ML WSe2 form p-type quasi-Ohmic and n-type Ohmic contacts, respectively. Therefore, 2D titanium carbides can be promising candidates as electrode materials for the ML WSe2 transistors by proper controlling of the surface functional group. (C) 2018 Elsevier Ltd. All rights reserved.
Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

S. Gupta,R. Ohshima,Y. Ando,T. Endo,Y. Miyata,M. Shiraishi

DOI: https://doi.org/10.1063/5.0079223

2023-10-13

Abstract:Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contacts behaviour by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small, without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behaviour of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.

Materials Science,Mesoscale and Nanoscale Physics
Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Yu-Wei Zhang,Jun-Yan Li,Chao-Hsin Wu,Chiao-Yun Chang,Shu-Wei Chang,Min-Hsiung Shih,Shih-Yen Lin

DOI: https://doi.org/10.1038/s41598-020-63098-1

2020-04-06

Abstract:We have demonstrated that with e-beam deposition of a thin Al2O3 layer before atomic layer deposition, a uniform Al2O3 film can be obtained on WSe2/sapphire samples. Device performances are observed for WSe2 top-gate transistors by using oxide stacks as the gate dielectric. By using thermal evaporation, epitaxially grown multilayer antimonene can be prepared on both MoS2 and WSe2 surfaces. With multilayer antimonene as the contact metal, a significant increase in drain currents and ON/OFF ratios is observed for the device, which indicates that high contact resistance between metal/2D material interfaces is a critical issue for 2D devices. The observation of multilayer antimonene grown on different 2D material surfaces has demonstrated less dependence on the substrate lattice constant of the unique van der Waals epitaxy for 2D materials. The results have also demonstrated that stacking 2D materials with different materials plays an important role in the practical applications of 2D devices.
Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Xiang-Wei Jiang,Shu-Shen Li

DOI: https://doi.org/10.1063/1.4878515

IF: 4

2014-05-12

Applied Physics Letters

Abstract:Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at Vg = Vd = 0.5 V when 2 nm thin HfO2 layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnel transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe2 based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.

physics, applied
Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Yichao Zhang,Fulai Zhao,Yu Wang,Yaling Wang,Yiyu Feng,Wei Feng

DOI: https://doi.org/10.1021/acsaelm.3c00397

IF: 4.494

2023-06-03

ACS Applied Electronic Materials

Abstract:As a representative material for two-dimensional transition metal dichalcogenides (2D TMDCs), tungsten disulfide (WS2) has a theoretical carrier mobility of up to 103 cm2·V–1·s–1 at room temperature (298 K) and is expected to be an excellent channel material for transistors. Meanwhile, the thickness of WS2 and the substrate thickness have an important impact on transistor performance. However, until now, despite extensive research on WS2-based field-effect transistors (WS2-FETs), WS2-FET performance has not been fully explored due to the large random thickness of WS2 nanosheets prepared using mechanical peeling methods and the lack of systematic studies on the preparation and testing of FET conditions and theoretical analysis, thus considerably limiting the application and development of WS2-FETs. In this study, we prepared FETs based on high-quality WS2 nanosheets via micromechanical exfoliation and investigated the factors influencing their performance. The optimum electrical properties of the WS2-FETs were obtained by regulating the thickness of the WS2 nanosheet and dielectric layer substrate and the annealing treatment, combined with theoretical simulation analysis. The resulting 9-layer WS2 nanosheets exhibited the best electrical properties, with a carrier mobility at 298 K of 531.41 cm2·V–1·s–1. The results of this study provide a basis for further research and optimization of high-performance logic devices based on 2D TMDCs.

materials science, multidisciplinary,engineering, electrical & electronic

High-Performance Field-Effect-Transistors On Monolayer-WSe2

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

High-performance N-Type Transistors Based on CVD-grown Large-Domain Trilayer WSe2

High-performance n-type transistors based on CVD-grown large-domain trilayer WSe 2

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Low Resistance Contact to P-Type Monolayer WSe2

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

High performance Bi2Se3 nanowire field-effect transistors

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation