Abstract:With continuous scaling-down of the DRAM technology node, the junctionless vertical gate all around device (JL-VGAA) becomes the mainstream transistor for 4F 2 DRAM cell. Simulating the JL-VGAA device using 3D-TCAD before wafer fab-out is indispensable for saving R&D cost. Here, we simulate the JL-VGAA performance based on the preliminary results of Su’s work [2]. Doping profile of JL-VGAA and diameter variation are the two key parameters affect its performance. Hence, we optimized the channel doping, after data normalization, the I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> is simulated as 17.6, and the I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> is 1.2×10 -12 . The ratio of I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> is approximately 1.4×10 13 . In addition, the variation of V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> is around 10 mV nm -1 with low-level channel doping, which is excellent among other devices. Finally, the word line (WL) and bit line (BL) coupling capacitance were calculated. Overall, the total capacitance of JL-VGAA is less than the state of the art of emerging DRAM structure. Future research should further develop and confirm these initial findings by this paper.

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