Abstract:Although the emerging 3D DRAM products can significantly improve the computing system performance, the relatively high cost is one of the most critical issues that prevent their wide real-life adoption. Intuitively, a strong memory fault tolerance can be leveraged to reduce the fabrication cost of DRAM dies, and the total cost will reduce if the fabrication cost saving can off-set the cost overhead of memory fault tolerance. Nevertheless, such a simple concept can be a practically viable option only for 3D DRAM because: (1) The stacked logic die can solely implement memory fault tolerance inside 3D DRAM chips, obviating any changes on the host CPUs and CPU-DRAM interfaces. (2) With the total ownership of both the logic die and DRAM dies inside 3D DRAM chips, DRAM manufacturers can fully exploit the potential to truly minimize the 3D DRAM bit cost. Following this intuition, we developed a 3D DRAM fault tolerance design strategy. It can achieve a very strong tolerance to weak DRAM cells at very small redundancy and latency overhead. The key is to cohesively leverage the detectability of weak cells and runtime configurability of error correction code (ECC) decoding. In addition, this design strategy can gracefully embrace the inaccuracy of weak cell detection (e. g., weak cell miss-detection and false-detection). We carried out thorough mathematical analysis, and the results show that, under the redundancy overhead of 1: 8 (same as today's ECC DIMM), this design strategy can tolerate the weak cell rate of as high as 10(-4) and 6 x 10(-5) if 100 and 90 percent of all the weak cells are known in prior. Using Micron's hybrid memory cube (HMC) 3D DRAM chips as the test vehicle, we evaluated the implementation cost and the results show that it only consumes less than 0.4 mm(2) (45 nm node) on the logic die. Using CPU and DRAM simulators, we further carried out simulations over a variety of computing benchmarks and the results show that this design solution only incurs less than 2 percent performance degradation on average.

Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)

Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array Transistor

Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM

Row hammer-induced D0 failure improvement in sub-20 nm DRAM using air gap

Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM

Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance Variation

Characterization and Mitigation of Electromigration Effects in TSV-Based Power Delivery Network Enabled 3D-Stacked DRAMs

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

Design Guideline of Saddle-Fin-Based DRAM for Mitigating Rowhammer Effect

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence

Improvement of VRT immunity using low 10-boron word line in recent DRAM

Enabling the Adoption of Processing-in-Memory: Challenges, Mechanisms, Future Research Directions

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-Nm DRAM Node—Part I: Defect-Based Statistical Compact Model

Architecture design exploration of three-dimensional (3D) integrated DRAM

Variation-aware analysis of buried-channel-array transistors (BCATs) in scaled DRAM: insights from 3D quasi-atomistic simulations

Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Improving 3D DRAM Fault Tolerance Through Weak Cell Aware Error Correction.

Hardware Architecture and Software Stack for PIM Based on Commercial DRAM Technology : Industrial Product