Abstract:Although the emerging 3D DRAM products can significantly improve the computing system performance, the relatively high cost is one of the most critical issues that prevent their wide real-life adoption. Intuitively, a strong memory fault tolerance can be leveraged to reduce the fabrication cost of DRAM dies, and the total cost will reduce if the fabrication cost saving can off-set the cost overhead of memory fault tolerance. Nevertheless, such a simple concept can be a practically viable option only for 3D DRAM because: (1) The stacked logic die can solely implement memory fault tolerance inside 3D DRAM chips, obviating any changes on the host CPUs and CPU-DRAM interfaces. (2) With the total ownership of both the logic die and DRAM dies inside 3D DRAM chips, DRAM manufacturers can fully exploit the potential to truly minimize the 3D DRAM bit cost. Following this intuition, we developed a 3D DRAM fault tolerance design strategy. It can achieve a very strong tolerance to weak DRAM cells at very small redundancy and latency overhead. The key is to cohesively leverage the detectability of weak cells and runtime configurability of error correction code (ECC) decoding. In addition, this design strategy can gracefully embrace the inaccuracy of weak cell detection (e. g., weak cell miss-detection and false-detection). We carried out thorough mathematical analysis, and the results show that, under the redundancy overhead of 1: 8 (same as today's ECC DIMM), this design strategy can tolerate the weak cell rate of as high as 10(-4) and 6 x 10(-5) if 100 and 90 percent of all the weak cells are known in prior. Using Micron's hybrid memory cube (HMC) 3D DRAM chips as the test vehicle, we evaluated the implementation cost and the results show that it only consumes less than 0.4 mm(2) (45 nm node) on the logic die. Using CPU and DRAM simulators, we further carried out simulations over a variety of computing benchmarks and the results show that this design solution only incurs less than 2 percent performance degradation on average.

Design Guideline of Saddle-Fin-Based DRAM for Mitigating Rowhammer Effect

Double-sided Row Hammer Effect in Sub-20 Nm DRAM: Physical Mechanism, Key Features and Mitigation

Row hammer-induced D0 failure improvement in sub-20 nm DRAM using air gap

Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)

Unveiling RowPress in Sub-20 nm DRAM Through Comparative Analysis With Row Hammer: From Leakage Mechanisms to Key Features

Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

An Experimental Analysis of RowHammer in HBM2 DRAM Chips

Mithril: Cooperative Row Hammer Protection on Commodity DRAM Leveraging Managed Refresh

13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications

Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance Variation

Improving 3D DRAM Fault Tolerance Through Weak Cell Aware Error Correction.

Understanding the Competitive Interaction in Leakage Mechanisms for Effective Row Hammer Mitigation in Sub-20 Nm DRAM

Rowhammer Vulnerability of DRAMs in 3-D Integration

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Preventing Rowhammer Exploits via Low-Cost Domain-Aware Memory Allocation

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands