Abstract:Aerospace equipages encounter potential radiation footprints through which soft errors occur in the memories onboard. Hence, robustness against radiation with reliability in memory cells is a crucial factor in aerospace electronic systems. This work proposes a novel Carbon nanotube field-effect transistor (CNTFET) in designing a robust memory cell to overcome these soft errors. Further, a petite driver circuit to test the SRAM cells which serve the purpose of precharge and sense amplifier, and has a reduction in threefold of transistor count is recommended. Additionally, analysis of robustness against radiation in varying memory cells is carried out using standard GPDK 90 nm, GPDK 45 nm, and 14 nm CNTFET. The reliability of memory cells depends on the critical charge of a device, and it is tested by striking an equivalent current charge of the cosmic ray's linear energy transfer (LET) level. Also, the robustness of the memory cell is tested against the variation in process, voltage and temperature. Though CNTFET surges with high power consumption, it exhibits better noise margin and depleted access time. GPDK 45 nm has an average of 40% increase in SNM and 93% reduction of power compared to the 14 nm CNTFET with 96% of surge in write access time. Thus, the conventional MOSFET's 45 nm node outperforms all the configurations in terms of static noise margin, power, and read delay which swaps with increased write access time.

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A Novel Soft Error Immunity SRAM Cell

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

A Novel Seu Hardened Sram Bit-Cell Design

Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

A Novel Circuit and Layout Design of SEU Tolerant SRAM in a 65nm CMOS Process

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

SEU-hardened SRAM Cell

Research on design of low-leakage SRAM cells for FPGA

A Highly Reliable Radiation Hardened 8T SRAM Cell Design

A Highly Reliable and Low-Power Cross-Coupled 18T SRAM Cell

Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

Single Event Latch-Up Hardening Using TCAD Simulations in 130 nm and 65 nm Embedded SRAM in Flash-Based FPGAs

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

A Novel Single Event Upset Hardened Cmos Sram Cell

A Physical Design Approach for Mitigating Soft Errors in SRAM-based FPGAs

Low Power and High Write Speed SEU Tolerant SRAM Data Cell Design

Radiation-Hardened 14T SRAM Bitcell with Speed and Power Optimized for Space Application

A Review on Soft Error Correcting Techniques of Aerospace-Grade Static RAM-Based Field-Programmable Gate Arrays

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure