Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

H+ Implantation Induced Defects Distribution in 4H-Sic Single Crystal Film Fabricated by Crystal-Ion-Slicing and Its Effects on Electrical Behavior: A Multiple Characterization Study

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Al-implantation induced damage in 4H-SiC

Evolution of secondary defects in arsenic implanted Si

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Atomic-scale revealing defects in ion irradiated 4H-SiC

Optical Characterization of Ion-Implanted 4H-SiC

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic