Abstract:Cu2ZnSn(S,Se)(4) (CZTSSe) films were deposited on the Mo-coated glass substrates, and the CZTSSe-based solar cells were successfully fabricated by a facile solution method and postselenization technique. The influencing mechanisms of the selenization temperature and time on the power conversion efficiency (PCE), short-circuit current density (J(sc)), open-circuit voltage (V-oc), and fill factor (FF) of the solar cell are systematically investigated by studying the change of the shunt conductance (G(sh)), series resistance (R-s), diode ideal factor (n), and reversion saturation current density (J(0)) with structure and crystal quality of the CZTSSe film and CZTSSe/Mo interface selenized at various temperatures and times. It is found that a Mo(S1-x,Se-x)(2) (MSSe) layer with hexagonal structure exists at the CZTSSe/Mo interface at the temperature of 500 degrees C, and its thickness increases with increasing selenization temperature and time. The MSSe has a smaller effect on the R-s, but it has a larger influence on the G(sh), n, and J(0). The PCE, V-oc, and FF change dominantly with G(sh), n, and J(0), while J(sc) changes with R-s and G(sh), but not R-s. These results suggest that the effect of the selenization temperature and time on the PCE is dominantly contributed to the change of the CZTSSe/CdS p-n junction and CZTSSe/MSSe interface induced by variation of the quality of the CZTSSe film and thickness of MSSe in the selenization process. By optimizing the selenization temperature and time, the highest PCE of 7.48% is obtained.

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Insight into the Role of Air-Annealing Cu2ZnSnS4 Precursor Films in Improving Efficiency of Cu2ZnSn(S,Se)4 Solar Cells

Unveiling the Selenization Reaction Mechanisms in Ambient Air-Processed Highly Efficient Kesterite Solar Cells

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

High Efficiency Sb and Ag Double Doped Cu2ZnSn(S, Se)4 Thin Film Solar Cells Realized by Post-Heat Treatment Process of Heterojunction

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Preparation and Characterization of Ag2ZnSn(S,Se)4 and Its Application in Improvement of Power Conversion Efficiency of Cu2ZnSn(S,Se)4-based Solar Cells

Device Postannealing Enabling over 12% Efficient Solution-Processed Cu2 ZnSnS4 Solar Cells with Cd2+ Substitution.

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Insight into the Role of Post-Annealing in Air for High Efficient Cu2ZnSn(S,Se)4 Solar Cells

Effects of Selenization Conditions on Microstructure Evolution in Solution Processed Cu2ZnSn(S,Se)(4) Solar Cells

Exploring the optimal two-step selenization process to enhance the performance of ionic liquid solution based Cu2ZnSn(S,Se)4 thin film solar cells

Kesterite Cu2znsn(S,Se)(4) Solar Cells with Beyond 8% Efficiency by A Sol Gel and Selenization Process

Improvement of the Photovoltaic Performance of Ag-alloyed Cu2ZnSn(S,Se)(4)-based Solar Cells by Optimizing the Selenization Temperature

Efficiency Enhancement of Cu2ZnSn(S, Se)4 Solar Cells by Addition a CuSe Intermediate Layer Between Cu2ZnSn(S, Se)4 and Mo Electrode

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process

Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)4-Based Solar Cells.

Regulating air‐annealing time for boosting performance of Cu2ZnSn(S, Se)4 solar cells

Growth of Large Grain-Size Cu2ZnSn(SxSe1-x)4 Thin Films by Annealing Precursors Sputtered from a Single Quaternary Target for Solar Cells Application

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Enhancing the performance of Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cell fabricated via successive ionic layer adsorption and reaction method by optimizing the annealing process