High Efficiency Sb and Ag Double Doped Cu2ZnSn(S, Se)4 Thin Film Solar Cells Realized by Post-Heat Treatment Process of Heterojunction

Tianyue Wang,Yingrui Sui,Chang Miao,Yue Cui,Zhanwu Wang,Lili Yang,Fengyou Wang,Xiaoyan Liu,Bin Yao
DOI: https://doi.org/10.1016/j.apsusc.2024.161375
IF: 6.7
2025-01-01
Applied Surface Science
Abstract:Cu2ZnSn (S, Se)4 (CZTSSe) semiconductors have become a recent focus of research owing to their costeffectiveness, environmental friendliness, and high efficiency. However, insufficient band alignment between the CZTSSe absorption layer and the CdS buffer layer significantly hampers the high conversion efficiency of CZTSSe devices. In this study, problems related to energy-band matching were solved by the post-heat treatment (PHT) of the absorber and buffer layers. Based on obtaining a high-quality absorption layer through doubledoped (Cu, Ag)2Zn(Sn, Sb)(S, Se)4 (CAZTSSSe), the impact of the PHT process of CAZTSSSe/CdS on the device performance and heterojunction quality was investigated. The PHT process promoted the reciprocating motion of elements in the heterojunction region, directly inducing the movement of Cd towards the absorption layer and Cu towards the buffer layer. Furthermore, the PHT method enhances the recrystallization of CdS, resulting in the formation of a CdS layer with excellent crystalline quality. After PHT processing, a more favorable conduction band arrangement was obtained, which helps to reduce non-radiative recombination. Ultimately, when the PHT temperature reaches 200 degrees C, we get an optimal device with an efficiency of up to 9.44 %, as open circuit voltage (VOC) escalates to 431 mV, and lower fill factor (FF) attains 55.63 %. It is believed that this PHT process can be better applied in thin film cells to obtain high-efficiency solar cells.
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