Abstract:Many literatures have demonstrated that a smaller amount of Ag doping in Cu2ZnSn(S, Se)4 (CZTSSe) can elevate the open-circuit voltage (Voc) and fill factor (FF) of CZTSSe solar cells, but decrease short-circuit current density (Jsc) due to the increase in bandgap (Eg) of the CAZTSSe by Ag doping. The decreased Jsc limits the enhancement in PCE through Ag doping. In this paper, to compensate for the deficit in Jsc and further increase Voc and FF, a strategy is proposed to substitute CdS/CAZTSSe in CAZTSSe solar cells with annealed B-doped CdS/CAZTSSe. It is found that B doping can increase the electron density of CdS (ne) and decrease the lattice mismatch between CdS and CAZTSSe. Annealing can decrease the hole density of CAZTSSe (np) and passivate the surface of CAZTSSe by diffusing B towards the surface of CAZTSSe. The increased ne and reduced np widen the depletion region, leading to an increase in photogenerated carrier density (JL), resulting in an increase in Jsc. The surface passivation and decreased lattice mismatch can reduce interfacial recombination, resulting in decrease in the reverse saturation current density (J0), so further increases in Voc and FF. By optimizing the Ag doping content, B doping content, as well as the annealing temperature and time of the BxCd1-xS/CAZTSSe, the power conversion efficiency (PCE) increases from 8.96% to 11.06%. This study not only advances a deeper understanding of the mechanisms behind various parameters in CZTSSe solar cells but also proposes a method to boost the PCE of CZTSSe solar cells.

Insight into the Role of Air-Annealing Cu2ZnSnS4 Precursor Films in Improving Efficiency of Cu2ZnSn(S,Se)4 Solar Cells

Insight into the Role of Post-Annealing in Air for High Efficient Cu2ZnSn(S,Se)4 Solar Cells

Regulating air‐annealing time for boosting performance of Cu2ZnSn(S, Se)4 solar cells

Improvement of Performance of Cu2ZnSn(S, Se)4 Solar Cells by Low‐Temperature Annealing of B‐Doped CdS

Significantly Improving the Crystal Growth of a Cu 2 ZnSn(S,Se) 4 Absorber Layer by Air-Annealing a Cu 2 ZnSnS 4 Precursor Thin Film

Enhancing the Efficiency of Air-Processed (cu, Ag)2ZnSn(S, Se)4 Solar Cells by Regulating the Band Tail and Interface Recombination

Preparation and Characterization of Ag2ZnSn(S,Se)4 and Its Application in Improvement of Power Conversion Efficiency of Cu2ZnSn(S,Se)4-based Solar Cells

A Study on Cr Incorporation to Enhance Performance of CZTSSe Solar Cells Via Optimizing Selenization Condition

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process

Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)4-Based Solar Cells.

A High Effciency (11.06 %) CZTSSe Solar Cell Achieved by Combining Ag Doping in Absorber and BxCd1-xs/caztsse Heterojunction Annealing

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon

Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration

Impact of Sequential Annealing Step on the Performance of Cu2ZnSn(S,Se)4 Thin Film Solar Cells

Enhancement of power conversion efficiency of Ag-substituted Cu2ZnSn(S,Se)4 solar cells via tuning Cu2+/(Cu++Cu2+) percentage in precursor solution

Fabrication of Cu2ZnSnS4 Thin Film Solar Cells by Annealing of Reactively Sputtered Precursors

Exploring the optimal two-step selenization process to enhance the performance of ionic liquid solution based Cu2ZnSn(S,Se)4 thin film solar cells

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Improvement of the Photovoltaic Performance of Ag-alloyed Cu2ZnSn(S,Se)(4)-based Solar Cells by Optimizing the Selenization Temperature

Growth of Large Grain-Size Cu2ZnSn(SxSe1-x)4 Thin Films by Annealing Precursors Sputtered from a Single Quaternary Target for Solar Cells Application

Cu2ZnSnSe4 Thin Film Solar Cells Prepared by Rapid Thermal Annealing of Co-Electroplated Cu–Zn–Sn Precursors