Abstract:Cu2ZnSn(S,Se)4 (CZTSSe) is a hopeful substitution to commercialized Cu(In,Ga)Se2 (CIGSe) devices with similar structure and optoelectronic properties and has advantages of nontoxicity, low cost, and abundant reserves. However, the traditional flat bandgap structure of the CZTSSe absorber layer does not efficiently enhance the collection of photogenerated electrons and decrease recombination. Graded bandgap engineering toward the interfaces of CIGSe solar cells is the key to realize high-efficiency devices. In this study, we obtained (Cu1-xAgx)2ZnSn(S,Se)4 (CAZTSSe) absorber layers with high-concentration Ag doping at both ends of the absorption layer and undoped or low-concentration Ag doping in the middle part through a new miscible layered precursor method. This bandgap structure suppressed CuZn defects, delayed Fermi level pinning near the CZTSSe/CdS interface, sustained good electrical conductivity and light absorption in the middle of the absorption layer, improved the conversion efficiency of incident light, and inhibited recombination of carriers toward the Mo back electrode. In addition, we also compared the performance of undoped, uniformly Ag-doped, and V-type Ag-doped CZTSSe devices to acquire a deeper understanding of the reasons for the enhanced performance. It can be found that compared with undoping, the open-circuit voltage (Voc) of the best devices with uniform doping (x = 15%) increased from 379 to 386 mV, the fill factor (FF) increased from 44.70 to 54.14%, and the photoelectric conversion efficiency (PCE) increased from 4.63 to 6.21%. More surprisingly, the Voc of the optimal CAZTSSe devices (sample D) with Ag-graded doping was increased to 413 mV and the FF was increased to 59.63%. It also achieved an impressive PCE of 7.35%. The above results prove the importance of tuning Ag gradient doping of CZTSSe films for improving solar cell performance.

Improvement of the Photovoltaic Performance of Ag-alloyed Cu2ZnSn(S,Se)(4)-based Solar Cells by Optimizing the Selenization Temperature

Selenization Post-Treatment Ag-alloyed Cu2ZnSn(S,Se)4 Films for Enhancing Photovoltaic Performance of Solar Cells

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)4-Based Solar Cells.

Enhancing Open-Circuit Voltage of Solution-Processed Cu 2 ZnSn(S,Se) 4 Solar Cells with Ag Substitution

Effects of Selenization Conditions on Microstructure Evolution in Solution Processed Cu2ZnSn(S,Se)(4) Solar Cells

A Study on Cr Incorporation to Enhance Performance of CZTSSe Solar Cells Via Optimizing Selenization Condition

Substitution of Ag for Cu in Cu2ZnSn(S,Se)4: Toward Wide Band Gap Absorbers with Low Antisite Defects for Thin Film Solar Cells

Enhancement of power conversion efficiency of Ag-substituted Cu2ZnSn(S,Se)4 solar cells via tuning Cu2+/(Cu++Cu2+) percentage in precursor solution

Using soda-lime glass transition temperature to enhance the efficiency of Cu2ZnSn(S,Se)4 solar cell

Improvement of Power Conversion Efficiency of Cu <sub>2</sub>znsn(s,se) <sub>4</sub> Solar Cells by Al Doped CdS

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon

Enhancing the Efficiency of Air-Processed (cu, Ag)2ZnSn(S, Se)4 Solar Cells by Regulating the Band Tail and Interface Recombination

Optimization of the Selenization Pressure Enabling Efficient Cu 2 ZnSn(S,Se) 4 Solar Cells

Impact of Cation Substitution in (Ag x Cu 1− x ) 2 ZnSnSe 4 Absorber‐Based Solar Cells toward 10% Efficiency: Experimental and Theoretical Analyses

Further Boosting Solar Cell Performance Via Bandgap-Graded Ag Doping in Cu2ZnSn(S,Se)4 Solar Cells Compared to Uniform Ag Doping

Structure, Optical and Electrical Properties of (Cu1-Xagx)2znsn(s,se)4 Alloy Thin Films for Photovoltaic Application

Optimization of the Selenization Pressure Enabling Efficient Cu2ZnSn(S,Se)4 Solar Cells

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

A High Effciency (11.06 %) CZTSSe Solar Cell Achieved by Combining Ag Doping in Absorber and BxCd1-xs/caztsse Heterojunction Annealing

Preparation and Characterization of Ag2ZnSn(S,Se)4 and Its Application in Improvement of Power Conversion Efficiency of Cu2ZnSn(S,Se)4-based Solar Cells