Abstract:Cu2ZnSn(S,Se)4 (CZTSSe) is a hopeful substitution to commercialized Cu(In,Ga)Se2 (CIGSe) devices with similar structure and optoelectronic properties and has advantages of nontoxicity, low cost, and abundant reserves. However, the traditional flat bandgap structure of the CZTSSe absorber layer does not efficiently enhance the collection of photogenerated electrons and decrease recombination. Graded bandgap engineering toward the interfaces of CIGSe solar cells is the key to realize high-efficiency devices. In this study, we obtained (Cu1-xAgx)2ZnSn(S,Se)4 (CAZTSSe) absorber layers with high-concentration Ag doping at both ends of the absorption layer and undoped or low-concentration Ag doping in the middle part through a new miscible layered precursor method. This bandgap structure suppressed CuZn defects, delayed Fermi level pinning near the CZTSSe/CdS interface, sustained good electrical conductivity and light absorption in the middle of the absorption layer, improved the conversion efficiency of incident light, and inhibited recombination of carriers toward the Mo back electrode. In addition, we also compared the performance of undoped, uniformly Ag-doped, and V-type Ag-doped CZTSSe devices to acquire a deeper understanding of the reasons for the enhanced performance. It can be found that compared with undoping, the open-circuit voltage (Voc) of the best devices with uniform doping (x = 15%) increased from 379 to 386 mV, the fill factor (FF) increased from 44.70 to 54.14%, and the photoelectric conversion efficiency (PCE) increased from 4.63 to 6.21%. More surprisingly, the Voc of the optimal CAZTSSe devices (sample D) with Ag-graded doping was increased to 413 mV and the FF was increased to 59.63%. It also achieved an impressive PCE of 7.35%. The above results prove the importance of tuning Ag gradient doping of CZTSSe films for improving solar cell performance.

Enhancing Open-Circuit Voltage of Solution-Processed Cu 2 ZnSn(S,Se) 4 Solar Cells with Ag Substitution

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Substitution of Ag for Cu in Cu2ZnSn(S,Se)4: Toward Wide Band Gap Absorbers with Low Antisite Defects for Thin Film Solar Cells

Enhancement of power conversion efficiency of Ag-substituted Cu2ZnSn(S,Se)4 solar cells via tuning Cu2+/(Cu++Cu2+) percentage in precursor solution

Impact of Cation Substitution in (Ag x Cu 1− x ) 2 ZnSnSe 4 Absorber‐Based Solar Cells toward 10% Efficiency: Experimental and Theoretical Analyses

g x ) 2 ZnSn ( S , Se ) 4 solar cells on fl exible Mo foils

Efficient (Cu1−xAgx)2ZnSn(S,Se)4 solar cells on flexible Mo foils

Synergistic Effect of Ag, Sb Dual‐Cation Substitution on Cu2ZnSn (S, Se)4 High‐Efficiency Solar Cells

Ag alloying for modifications of carrier density and defects in Zn-rich (Ag,Cu)2ZnSnSe4 thin film solar cells

Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

An Efficient Cr-doping Strategy to Optimize the Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells for Better Optoelectronic Performance

Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells with the Lowest VOC Deficit.

Improvement of the Photovoltaic Performance of Ag-alloyed Cu2ZnSn(S,Se)(4)-based Solar Cells by Optimizing the Selenization Temperature

Efficient kesterite Ag-alloyed Cu 2 ZnSn(S,Se) 4 thin film solar cells with a front Ag grading distribution enabled by ZnO insert layer

Further Boosting Solar Cell Performance Via Bandgap-Graded Ag Doping in Cu2ZnSn(S,Se)4 Solar Cells Compared to Uniform Ag Doping

Improving the performance of kesterite solar cells by solution germanium alloying

Enhancing the Photovoltaic Efficiency of CZTSSe Thin-Film Solar Cells Via Ag-doping Induced Defect Modulation

Optimizing the properties of Cu2ZnSn(S,Se)4 solar cells via cationic substitution with trace Ca

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Improvement of Performance of CZTSSe Solar Cells by the Synergistic Effect of Back Contact Modification and Ag Doping.