Abstract:Cu2ZnSn(S,Se)4 (CZTSSe) is a hopeful substitution to commercialized Cu(In,Ga)Se2 (CIGSe) devices with similar structure and optoelectronic properties and has advantages of nontoxicity, low cost, and abundant reserves. However, the traditional flat bandgap structure of the CZTSSe absorber layer does not efficiently enhance the collection of photogenerated electrons and decrease recombination. Graded bandgap engineering toward the interfaces of CIGSe solar cells is the key to realize high-efficiency devices. In this study, we obtained (Cu1-xAgx)2ZnSn(S,Se)4 (CAZTSSe) absorber layers with high-concentration Ag doping at both ends of the absorption layer and undoped or low-concentration Ag doping in the middle part through a new miscible layered precursor method. This bandgap structure suppressed CuZn defects, delayed Fermi level pinning near the CZTSSe/CdS interface, sustained good electrical conductivity and light absorption in the middle of the absorption layer, improved the conversion efficiency of incident light, and inhibited recombination of carriers toward the Mo back electrode. In addition, we also compared the performance of undoped, uniformly Ag-doped, and V-type Ag-doped CZTSSe devices to acquire a deeper understanding of the reasons for the enhanced performance. It can be found that compared with undoping, the open-circuit voltage (Voc) of the best devices with uniform doping (x = 15%) increased from 379 to 386 mV, the fill factor (FF) increased from 44.70 to 54.14%, and the photoelectric conversion efficiency (PCE) increased from 4.63 to 6.21%. More surprisingly, the Voc of the optimal CAZTSSe devices (sample D) with Ag-graded doping was increased to 413 mV and the FF was increased to 59.63%. It also achieved an impressive PCE of 7.35%. The above results prove the importance of tuning Ag gradient doping of CZTSSe films for improving solar cell performance.

Efficient kesterite Ag-alloyed Cu 2 ZnSn(S,Se) 4 thin film solar cells with a front Ag grading distribution enabled by ZnO insert layer

Formation of the Front-Gradient Bandgap in the Ag Doped CZTSe Thin Films and Solar Cells

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Substitution of Ag for Cu in Cu2ZnSn(S,Se)4: Toward Wide Band Gap Absorbers with Low Antisite Defects for Thin Film Solar Cells

Ag alloying for modifications of carrier density and defects in Zn-rich (Ag,Cu)2ZnSnSe4 thin film solar cells

Enhancing Open-Circuit Voltage of Solution-Processed Cu 2 ZnSn(S,Se) 4 Solar Cells with Ag Substitution

Suppressing Deep-Level Trap Toward over 13% Efficient Solution-Processed Kesterite Solar Cell

Highly efficient, ultrathin, Cd-free kesterite solar cells in superstrate configuration enabled by band level tuning via Ag incorporation

Ag‐Refined Kesterite in Superstrate Solar Cell Configuration with 9.7% Power Conversion Efficiency

Sulfur-graded kesterite structured film drives improvement of VOC

Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

Further Boosting Solar Cell Performance Via Bandgap-Graded Ag Doping in Cu2ZnSn(S,Se)4 Solar Cells Compared to Uniform Ag Doping

Regulating Hetero‐Nucleation Enabling Over 14% Efficient Kesterite Solar Cells

Regulating SnZn Defects and Optimizing Bandgap in the Cu2ZnSn(S,Se)4 Absorption Layer by Ge Gradient Doping for Efficient Kesterite Solar Cells

Suppressing Surface and Bulk Effect Enables High Efficiency Solution-Processed Kesterite Solar Cells

Impact of Cation Substitution in (Ag x Cu 1− x ) 2 ZnSnSe 4 Absorber‐Based Solar Cells toward 10% Efficiency: Experimental and Theoretical Analyses

Multinary alloying for facilitated cation exchange and suppressed defect formation in kesterite solar cells with above 14% certified efficiency

Viable Strategy for Suppressing Antisite Defects and Band Tailing States in Solution-Processed Kesterite Solar Cells Via IIIA Incorporation: Case of Aluminum

Improving the performance of kesterite solar cells by solution germanium alloying

Segmented Control of Selenization Environment for High‐Quality Cu2ZnSn(S,Se)4 Films Toward Efficient Kesterite Solar Cells

Abundance Of Cu-Zn + Sn-Zn And 2cu(Zn) + Sn-Zn Defect Clusters In Kesterite Solar Cells