Regulating air‐annealing time for boosting performance of Cu2ZnSn(S, Se)4 solar cells

Guonan Cui,Xin Zhao,Yanchun Yang,Junting Ren,Yanqing Liu,Rui Wang,Lulu Bai,Yiming Wang,Chengjun Zhu,Xiaogong Lv
DOI: https://doi.org/10.1002/solr.202300769
IF: 9.1726
2023-11-22
Solar RRL
Abstract:Excellent morphology and low harmful defect states of the absorber layer are essential to fabricate the high‐performance Cu2ZnSn(S, Se)4 (CZTSSe) devices. In this study, the annealing time of precursor films in air was proved to have much impact on the quality of absorber layer and the performance of devices. Appropriately extending the air‐annealing time can promote the diffusion of Na into films and O absorption on the surface of precursor films, boost the growth of crystal grain, and lessen the harmful defect density and band‐tailing states of absorber. And the appropriate extension of air‐annealing time also regulates the electrical properties of the absorber. The efficiency of CZTSSe devices is enhanced from 6.92% (1 min) to 10.1% (7 min), with the decreased VOC, Def. These enhanced properties demonstrate regulating the air‐annealing time of precursor films can be a simple and direct way for improving the performance of CZTSSe devices. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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