Defects and Surface Electrical Property Transformation Induced by Elemental Interdiffusion at the p–n Heterojunction via High-Temperature Annealing

Siyu Wang,Zhan Shen,Yali Sun,Hui Li,Kaizhi Zhang,Li Wu,Jianping Ao,Yi Zhang
DOI: https://doi.org/10.1021/acsami.1c00096
2021-03-08
Abstract:Heterojunction annealing is widely used to improve the efficiency of kesterite thin-film solar cells. However, the efficiency will decrease when the annealing temperature is high, and the reason why high-temperature postdeposition annealing results in the deterioration of device performance is not well-studied, which restricts the efficiency promotion of kesterite solar cells. This study investigates the effect of high-temperature postdeposition annealing on the p–n heterojunction and, thus, on the performance of the solar cell. The surface potential of the absorber layer inverts, the number of deep-level defects increases, and the CdS/CZTSe interface barrier height increases after high-temperature postdeposition annealing. A combination of different characterization methods reveals that excessive elemental diffusion at the p–n heterojunction during high-temperature postdeposition annealing is the key reason for deterioration of the performance of CZTSe devices. This study discloses the mechanism for the change in device properties with high-temperature postdeposition annealing and will also be helpful for understanding the mechanism of efficiency change as the solar cell keeps working.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c00096?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c00096</a>.Ideal diode factor <i>A</i> and reverse saturation current <i>J</i><sub>0</sub> of the CZTSe solar cells at different annealing temperatures from fitting the light <i>J</i>–<i>V</i> curves; carrier concentration depth profiles of CZTSe devices annealed at RT and 300 °C obtained by <i>C</i>–<i>V</i> measurements; simulation parameters of each layer for CZTSe devices annealed at RT and 300 °C using wxAMPS; list of the simulated photovoltaic parameters of CZTSe devices annealed at RT and 300 °C (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c00096/suppl_file/am1c00096_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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