Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

A Scanning Microwave Impedance Microscopy Study of Α‐in2se3 Ferroelectric Semiconductor

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

In-Plane Ferrielectric Order in van der Waals β'-In2Se3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Ferroelectric-Tunable Photoresponse in Α- In2Se3 Photovoltaic Photodetectors: an Ab Initio Quantum Transport Study

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Atomic Imaging of Electrically Switchable Striped Domains in β ′‐In 2 Se 3

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric -In<sub>2</sub>Se<sub>3</sub>

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric alpha-In2Se3

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device

A Ferroelectric Semiconductor Field-Effect Transistor

Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions