Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors
Yitong Chen,Dingwei Li,Huihui Ren,Yingjie Tang,Kun Liang,Yan Wang,Fanfan Li,Chunyan Song,Jiaqi Guan,Zhong Chen,Xingyu Lu,Guangwei Xu,Wenbin Li,Shi Liu,Bowen Zhu
DOI: https://doi.org/10.1002/smll.202203611
IF: 13.3
2022-10-01
Small
Abstract:A synaptic memtransistor with highly linear and symmetric synaptic weight update characteristics is achieved, based on the polarization switching in two‐dimensional ferroelectric semiconductor of α‐In2Se3. The α‐In2Se3 memtransistor‐type synapse shows high accuracy of 97.76% for digit patterns recognition task in simulated artificial neural networks, promising for high‐performance neuromorphic computing. Brain‐inspired neuromorphic computing hardware based on artificial synapses offers efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry of synaptic weight updates in reported artificial synapses have impeded achieving high accuracy in neural networks. Here, this work develops a synaptic memtransistor based on polarization switching in a two‐dimensional (2D) ferroelectric semiconductor (FES) of α‐In2Se3 for neuromorphic computing. The α‐In2Se3 memtransistor exhibits outstanding synaptic characteristics, including near‐ideal linearity and symmetry and a large number of programmable conductance states, by taking the advantages of both memtransistor configuration and electrically configurable polarization states in the FES channel. As a result, the α‐In2Se3 memtransistor‐type synapse reaches high accuracy of 97.76% for digit patterns recognition task in simulated artificial neural networks. This work opens new opportunities for using multiterminal FES memtransistors in advanced neuromorphic electronics.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology