Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric alpha-In2Se3

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric -In<sub>2</sub>Se<sub>3</sub>

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Ferroelectric control of single-molecule magnetism in 2D limit

The Ferroelectric Field Effect on the Two-Dimensional Electron Gas at LaAlO3/SrTiO3 (001) Interface: Insights from First Principle Simulations

Tunable Band Alignments in 2D Ferroelectric alpha-In2Se3 Based Van der Waals Heterostructures

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Accurate force field of two-dimensional ferroelectrics from deep learning

Electrostatic Gating-Dependent Multiple Band Alignments in Ferroelectric α-In2Se3/α-Te van der Waals Heterostructures

Large-Scale Domain Engineering in Two-Dimensional FerroelectricCuInP2S6 Via Giant Flexoelectric Effect

Intrinsic Dipole Coupling in 2D Van Der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier

Electric-field switching of two-dimensional van der Waals magnets

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

Ferroelectric control of a spin-polarized two-dimensional electron gas

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures