Abstract:Terahertz (THz) photodetectors are widely used for applications related to security measurements and medicine due to their noninvasive properties; they are also used in the sixth-generation (6G) communication standard. High-performance THz photodetectors are in high demand; 2-D materials with intriguing ultrafast charge transport characteristics are promising candidates for preparing high-performance THz photodetectors. However, only graphene and black phosphorus (BP), which have a high carrier mobility, have been extensively used for fabricating THz photodetectors. THz photodetectors based on other 2-D materials are extremely rare. This work focuses on the 2-D material $\alpha $ -In 2 Se 3 , which has a high carrier mobility, comparable to that of BP. An $\alpha $ -In 2 Se 3 transistor based on the plasma-wave-rectification effect was fabricated as a THz photodetector. The photocurrent of the $\alpha $ -In 2 Se 3 transistor under 0.12-THz illumination is smaller than that measured in dark conditions. Our THz photoresponse result is unusual compared with that of conventional THz devices. Two main factors contribute to this result. When the $\alpha $ -In 2 Se 3 transistor is under 0.12-THz illumination, first, a higher order recombination occurs, and the net carrier concentration then decreases; second, the carrier movement changes from being temperature-activated to being band-like transport, and the carrier mobility then decreases. Therefore, the photocurrent of the $\alpha $ -In 2 Se 3 transistor is smaller than the dark current. Furthermore, the $\alpha $ -In 2 Se 3 transistor has potential uses in memory applications due to the ferroelectricity of $\alpha $ -In 2 Se 3 . Thus, the $\alpha $ -In 2 Se 3 transistor can be developed for use as an artificial photoinhibitory synaptic device in all-optical neural network simulations and low-energy-consumption THz photodetectors.

Ferroelectric-Tunable Photoresponse in Α- In2Se3 Photovoltaic Photodetectors: an Ab Initio Quantum Transport Study

Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study

Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions

Two-dimensional -In<sub>2</sub>Se<sub>3</sub>-based ferroelectric semiconductor junction for reconfigurable photodetectors

Piezo‐Phototronic Effect in 2D α‐In 2 Se 3 /WSe 2 van der Waals Heterostructure for Photodetector with Enhanced Photoresponse

Bulk photovoltaic effect in two-dimensional ferroelectric semiconductor $α$-In$_2$Se$_3$

Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting \{beta}-InSe/graphene heterostructure

Highly Sensitive Photodetector Based on Two-Dimensional Ferroelectric Semiconducting Β-Inse/graphene Heterostructure

Polarization tunable bidirectional photoresponse in Van der Waals -In<sub>2</sub>Se<sub>3</sub>/Nb<i>X</i><sub>2</sub> (<i>X</i> = S, Se, and Te) ferroelectric diodes

Coupled pyroelectric-photovoltaic effect in 2D ferroelectric $α$-In$_2$Se$_3$

Photoelectric and pyroelectric performance modulated by the in-plane ferroelectric polarization in multi-functional α-In2Se3-based transistor

Two-dimensional α-In2Se3-based ferroelectric semiconductor junction for reconfigurable photodetectors

Polarization tunable bidirectional photoresponse in Van der Waals ( ) ferroelectric diodes

Bulk Photovoltaic Effect in Two-Dimensional Ferroelectric Semiconductor Α-In_2se_3

Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor

Selective Enhancement of Photoresponse with Ferroelectric‐Controlled BP/In2Se3 Vdw Heterojunction

Α-In2se3 Nanostructure-Based Photodetectors for Tunable and Broadband Response

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

The α-In 2 Se 3 THz Photodetector

The Α-In2se3 THz Photodetector