Bulk photovoltaic effect in two-dimensional ferroelectric semiconductor $α$-In$_2$Se$_3$

Xiaojuan Chen,Kang Xu,Tingxiao Qin,Yubin Wang,Yuzhong Chen,Haiyun Liu,Qihua Xiong

2023-08-21

Abstract:Bulk photovoltaic effect, which arises from crystal symmetry-driven charge carrier separation, is an intriguing physical phenomenon that has attracted extensive interest in photovoltaic application due to its junction-free photovoltaic and potential to surpass Shockley-Queisser limit. Whereas conventional ferroelectric materials mostly suffer from extremely low photocurrent density and weak photovoltaic response at visible light wavelengths. Emerging two-dimensional ferroelectric semiconductors with coupled visible light absorption and spontaneous polarization characteristics are a promising alternative for making functional photoferroelectrics. Herein, we report the experimental demonstration of the bulk photovoltaic effect behavior based on the 2D ferroelectric semiconductor {$\alpha$-InSe caused by an out-of-plane polarization induced depolarization field. The {$\alpha$-InSe device exhibits enhanced bulk photovoltaic response in the visible light spectrum owing to its narrow bandgap. It was demonstrated that the generated photovoltaic current density was nearly two orders of magnitude greater than conventional bulk ferroelectric materials. These findings highlight the potential of 2D ferroelectric semiconductor materials for bulk photovoltaic applications in a broad spectral region.

Materials Science,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve an enhanced bulk photovoltaic effect (BPV) in two - dimensional ferroelectric semiconductor materials. Specifically, the researchers focus on how to utilize two - dimensional ferroelectric semiconductor materials (such as α - In₂Se₃) with visible - light absorption characteristics and spontaneous polarization to overcome the limitations of traditional ferroelectric materials in photovoltaic applications, such as low photocurrent density and weak photovoltaic response at visible - light wavelengths.

The paper experimentally demonstrates the bulk photovoltaic effect behavior based on the two - dimensional ferroelectric semiconductor α - In₂Se₃, which is caused by the depolarization field induced by out - of - plane polarization. It is found that α - In₂Se₃ devices exhibit an enhanced bulk photovoltaic response in the visible spectral range, and the generated photocurrent density is two orders of magnitude higher than that of traditional bulk ferroelectric materials. These findings highlight the potential of two - dimensional ferroelectric semiconductor materials for bulk photovoltaic applications in a wide spectral region.