Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study

Shibo Fang,Chen Yang,Qiuhui Li,Baochun Wu,Linqiang Xu,Shiqi Liu,Jie Yang,Jiachen Ma,Jichao Dong,Ying Li,Jinbo Yang,Jing Lu

DOI: https://doi.org/10.1103/physrevapplied.19.024024

IF: 4.6

2023-02-09

Physical Review Applied

Abstract:Two-dimensional α- In2Se3 has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an ultralow switching electric field. Here, we investigate the photoresponse in a lateral monolayer (ML) α- In2Se3 p-i-n junction by using ab initio quantum transport simulations. The maximum photoresponses of the lateral α- In2Se3 p-i-n junction are up to 69.2 and 31.6 mA/W for the ferroelectric wurtzite and zincblende phases (shortly named WZ' and ZB') α- In2Se3 , respectively, which are 8–17 times higher than that of the extensively researched graphene photodetector (4 mA/W). Remarkably, the ferroelectric photoresponses, defined as the photoresponse change ratio between the two ferroelectric states, of the lateral ML WZ' and ZB'- In2Se3 photodetectors have average values of 127% and 121% with surprising maximum values of 2×106% and 1×107% , respectively. The physical mechanism comes from the electron density redistribution altered by the atomic displacements due to the polarization switch, rather than the built-in potential change induced by the surface polarization charges. Such ferroelectric-tunable photoresponses in the α- In2Se3 photodetector suggest a potential in the fabrication of future optical detection and storage integrated devices. https://doi.org/10.1103/PhysRevApplied.19.024024 © 2023 American Physical Society

physics, applied