Abstract:Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent electrical and optical characteristics, 2D indium selenide (α-In2Se3) is a good candidate for photodetection applications. In addition, α-In2Se3 samples, including atom-thick α-In2Se3 layers, present ferroelectric properties. Herein, we report the fabrication and electrical and optoelectronic properties of multilayered graphene (Gr)/α-In2Se3/Gr-based ferroelectric semiconductor field-effect transistors (FeS-FETs). Furthermore, we discuss the physical mechanisms affecting electronic and optoelectronic transport in the Gr/α-In2Se3/Gr heterostructure. Large hysteresis was observed in the transfer characteristic curves and it was attributed to the ferroelectric polarization of MTL α-In2Se3 and carrier trapping–detrapping effects. The optoelectronic performance of the fabricated FeS-FETs depended on the ferroelectric properties of α-In2Se3 and can be easily tuned to achieve the maximum photoresponsivity and specific detectivity of 10 AW−1 and 4.4 × 1012 cmHz1/2 W−1, respectively.

Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting \{beta}-InSe/graphene heterostructure

Highly Sensitive Photodetector Based on Two-Dimensional Ferroelectric Semiconducting Β-Inse/graphene Heterostructure

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

Ferroelectric-Tunable Photoresponse in Α- In2Se3 Photovoltaic Photodetectors: an Ab Initio Quantum Transport Study

High Performance of InSe and InSeGraphene Heterostructure Based Wide Spectral Photodetectors

High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor

Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Selective Enhancement of Photoresponse with Ferroelectric‐Controlled BP/In2Se3 Vdw Heterojunction

Fast, Multicolor Photodetection with Graphene-Contacted P-Gase/n-inse Van Der Waals Heterostructures

Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.

Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction

A two-dimensional PtSe2 thin film coupled with a graphene/Si Schottky junction for a high-performance photodetector

Two-dimensional -In<sub>2</sub>Se<sub>3</sub>-based ferroelectric semiconductor junction for reconfigurable photodetectors

Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect

Fabrication of High-Gain Photodetector with Graphene–PbSe Heterostructure

High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

High Performance Van Der Waals Graphene–WS2–Si Heterostructure Photodetector

High Responsivity Photodetectors Based on Graphene/wse2 Heterostructure by Photogating Effect

Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study