Abstract:The InBiSe3/ReS2 heterostructure photodetector, which exhibits a type II band alignment and operates in a photoconductive mode, is shown to achieve a high responsivity of 7.68 A W−1 and a specific detectivity of 1.26 × 1011 Jones. The devices demonstrate extraordinary optical communication and high‐contrast polarimetric imaging capacity. Individual anisotropic two‐dimensional (2D) materials have been widely applied for developing polarization‐sensitive photodetectors, but they often suffer from limitations in photoresponsivity, detection range, etc. To overcome these challenges, van der Waals (vdW) heterostructures created by stacking different 2D materials provide a promising solution to enhance the performance of the photoelectronic device. In this work, a novel polarization‐sensitive photodetector is developed by leveraging a heterojunction formed by InBiSe3 and anisotropic ReS2 nanoflakes. The InBiSe3/ReS2 vdW heterostructure devices exhibit excellent photodetection performance with a high photoresponsivity (R) of 7.68 A W−1 and a specific detectivity (D*) up to 1.26 × 1011 Jones as well as an external quantum efficiency (EQE) of 1790% under 532 nm laser irradiation. Additionally, benefiting from the broadband light absorption of InBiSe3 crystals together with the pronounced anisotropic electronic and optical characteristics of ReS2 flakes, the devices demonstrate a broad spectral response range from 402 to 1006 nm with a distinct polarization sensitivity of 1.24. Moreover, the devices exhibit extraordinary optical communication and high contrast polarimetric imaging capacity. This work demonstrates the enhanced photodetection performance with the InBiSe3/ReS2 vdW heterostructures operating in a photoconductive mode and illustrates promising application of these heterostructures in integrated optoelectronic systems.

High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors

Strong Anisotropy of Multilayer γ‐InSe‐Enabled Polarization Division Multiplexing Photodetection

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Enhanced Photodetection Performance of InBiSe3/ReS2 Polarization‐Sensitive Heterostructure Photodetectors

High‐Performance Photodetector Based on Bi 2 Se 3 /GeSe Heterojunction with Band Alignment Evolution

Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting \{beta}-InSe/graphene heterostructure

Two-dimensional Van Der Waals Heterostructure of Indium Selenide/antimonene: Efficient Carrier Separation

Strong In-Plane Anisotropic SiP 2 as a IV–V 2D Semiconductor for Polarized Photodetection

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping

Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors

Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.

High-performance Polarization-Sensitive Photodetector Based on a Few-Layered PdSe 2 Nanosheet

Low-Pressure PVD Growth SnS/InSe Vertical Heterojunctions with Type-II band Alignment for Typical Nanoelectronics

Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.

Polarization-Resolved Near-Infrared PdSe2 P-I-n Homojunction Photodetector.

Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector

Highly Sensitive Photodetector Based on Two-Dimensional Ferroelectric Semiconducting Β-Inse/graphene Heterostructure

Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors

Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction