Abstract:Terahertz (THz) photodetectors are widely used for applications related to security measurements and medicine due to their noninvasive properties; they are also used in the sixth-generation (6G) communication standard. High-performance THz photodetectors are in high demand; 2-D materials with intriguing ultrafast charge transport characteristics are promising candidates for preparing high-performance THz photodetectors. However, only graphene and black phosphorus (BP), which have a high carrier mobility, have been extensively used for fabricating THz photodetectors. THz photodetectors based on other 2-D materials are extremely rare. This work focuses on the 2-D material $\alpha $ -In 2 Se 3 , which has a high carrier mobility, comparable to that of BP. An $\alpha $ -In 2 Se 3 transistor based on the plasma-wave-rectification effect was fabricated as a THz photodetector. The photocurrent of the $\alpha $ -In 2 Se 3 transistor under 0.12-THz illumination is smaller than that measured in dark conditions. Our THz photoresponse result is unusual compared with that of conventional THz devices. Two main factors contribute to this result. When the $\alpha $ -In 2 Se 3 transistor is under 0.12-THz illumination, first, a higher order recombination occurs, and the net carrier concentration then decreases; second, the carrier movement changes from being temperature-activated to being band-like transport, and the carrier mobility then decreases. Therefore, the photocurrent of the $\alpha $ -In 2 Se 3 transistor is smaller than the dark current. Furthermore, the $\alpha $ -In 2 Se 3 transistor has potential uses in memory applications due to the ferroelectricity of $\alpha $ -In 2 Se 3 . Thus, the $\alpha $ -In 2 Se 3 transistor can be developed for use as an artificial photoinhibitory synaptic device in all-optical neural network simulations and low-energy-consumption THz photodetectors.

The Α-In2se3 THz Photodetector

The α-In 2 Se 3 THz Photodetector

Photoelectric and pyroelectric performance modulated by the in-plane ferroelectric polarization in multi-functional α-In2Se3-based transistor

Broadband Bi2O2Se Photodetectors from Infrared to Terahertz

Two-dimensional -In<sub>2</sub>Se<sub>3</sub>-based ferroelectric semiconductor junction for reconfigurable photodetectors

A candidate material EuSn2As2-based terahertz direct detection and imaging

Ferroelectric-Tunable Photoresponse in Α- In2Se3 Photovoltaic Photodetectors: an Ab Initio Quantum Transport Study

Α-In2se3 Nanostructure-Based Photodetectors for Tunable and Broadband Response

Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study

High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2 Se 3 nanosheet photodetectors

Two-dimensional (2D) α-In2Se3/Ta2NiSe5 heterojunction photodetector with high sensitivity and fast response in a wide spectral range

PtTe2-based Terahertz Photodetector Integrated with an Interdigital Antenna

An Atomically Layered InSe Avalanche Photodetector.

Two-dimensional α-In2Se3-based ferroelectric semiconductor junction for reconfigurable photodetectors

Stable, Fast UV–Vis–NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on Α-In2te3 Films with a Direct Bandgap

PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Strong Anisotropic Two-Dimensional In2Se3 for Light Intensity and Polarization Dual-Mode High-Performance Detection.

Realization of P-Type In1.75Sb0.25Se3 Alloys for Short-Wave Infrared Photodetectors

Ultrasensitive 2D Bi 2 O 2 Se Phototransistors on Silicon Substrates.

Highly Efficient, Ultrabroad PdSe 2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

High Performance of Room-Temperature NbSe2 Terahertz Photoelectric Detector.