Chemical Vapor Deposition (CVD) of ZrC Coatings from ZrCl<sub>4</sub>-C<sub>3</sub>H<sub>6</sub>-H<sub>2</sub>

Qiao Mu Liu,Li Tong Zhang,Zhi Xin Meng,Laifei Cheng
DOI: https://doi.org/10.4028/www.scientific.net/amr.189-193.648
2011-01-01
Advanced Materials Research
Abstract:ZrC coatings were prepared by CVD using ZrCl 4 , C 3 H 6 , and H 2 as the precursors. The mechanisms responsible for the effects of deposition temperature, H 2 flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H 2 concentration can inhibit carbon deposition, and lead to a cauliflower structure.
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