Chemical Vapor Deposition (CVD) of ZrC Coatings from ZrCl 4 -C 3 H 6 -H 2

qiao mu liu,l t zhang,zhi xin meng,l f cheng
DOI: https://doi.org/10.4028/www.scientific.net/AMR.189-193.648
2011-01-01
Abstract:ZrC coatings were prepared by CVD using ZrCl(4), C(3)H(6), and H(2) as the precursors. The mechanisms responsible for the effects of deposition temperature, H(2) flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050 degrees C to 1150 degrees C, then to 1250 degrees C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H(2) concentration can inhibit carbon deposition, and lead to a cauliflower structure.
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