Abstract:This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain is also discussed on the optical phonon energies of the epitaxial layers. The techniques discussed here can be used to study other similar materials.

Effects of Carrier Gas on the Stress of A-Plane GaN Films Grown on R-Plane Sapphire Substrates by Metalorganic Chemical Vapor Deposition

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Effect of Stress on the Al Composition Evolution in AlGaN Grown Using Metal Organic Vapor Phase Epitaxy

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method