1.55 Μm Reflection-Type Optical Waveguide Switch Based on SiGe/Si Plasma Dispersion Effect

Baojun Li,Guozheng Li,Enke Liu,Zuimin Jiang,C. W. Pei,Xun Wang
DOI: https://doi.org/10.1063/1.124635
IF: 4
1999-01-01
Applied Physics Letters
Abstract:Based on total internal reflection and plasma dispersion effect, a SiGe/Si asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated. The switch performance is measured at the wavelength of 1.55 μm. A modulation depth of 90% at an injection current of 110 mA is obtained, and the switching time is about 0.2 μs. The device reaches a maximum optical switching at the injection current of 120 mA. The extinction ratio is larger than 34 dB and the crosstalk and insertion loss are less than −18.5 and 2.86 dB, respectively.
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