Abstract:The concept of memory that can only be read but cannot be changed seems strange at first. In reality, it is found that it has great application potential, such as the processor with a fixed purpose, the initial set value of the microprocessor BIOS, and these data are stored in Programmable Read-Only Memory (PROM) to quickly realize system functions. The PROM storage content is fixed, greatly simplifying his design. The radiation of space particles is the main factor causing the failure of the electronic system of spacecraft. The PROM storage array of the space electronic system is the most basic guarantee for the normal operation of the electronic system. The chip adopts domestic 130 nm standard technology of Complementary Metal Oxide Semiconductor (CMOS), Muller-C digital filter is used in the peripheral subsystem of PROM storage array, and the core cell uses Dual Interlocked Cell (DICE) and ring gate and other radiation hardening technologies to design a 32Kx8bit radiation resistant asynchronous programmable PROM. Pre-silicon of devices was verified by Technology Computer Aided Design (TCAD), and post silicon radiation verification was completed through radiation experiment. The post silicon radiation experiment showed that the total ionizing Dose (TID) capacity of the PROM chip was ≥100 Krad (Si), the critical value of single event upset (SEU) was ≥37.1 MeV·cm 2 /mg, the critical value of single event latch up was ≥98 MeV·cm 2 /mg, meeting the life requirements of the initial value storage of aerospace electronic systems. These performances ensure the reliable operation of the space electronic system after restart.

Application of Complex Programmable Logic Devices in Memory Radiation Effects Test System

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Design Method of General-Purpose Driving Circuit for CCD Based on CPLD

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

Research on CPLD Application in Manufacturing Test of CP's Distribution Frame

Application of CPLD in the Industrial CT System

LDPC coding scheme for improving the reliability of multi-level-cell NAND flash memory in radiation environments

Measurement System of Single Event Latchup Radiation Effects for Very Large Scale Integrated Circuits

The Design of the SRAM-Based on Reconfigurable Circuits in PLD

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

A Driving Pulse Edge Modulation Technique and Its Complex Programming Logic Devices Implementation.

A Radiation-Hardened Dll With Fine Resolution And Dcc For Ddr2 Memory Interface In 0.13 Mu M Cmos

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Application of CPLD in the No-contact Displacement Measurement System

ATmega128 and CPLD-based digital relay protection system design and implementation

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Ionizing Radiation Testing System for Emerging Semiconductor Materials and Devices

A Radiation-Hardened Programmable Read Only Memory for Space Applications.

Curling-PCM: Application-specific Wear Leveling for Phase Change Memory Based Embedded Systems

Including the effects of process-related variability on radiation response using a new test chip

A System-level Method for Hardening Phase-Locked Loop to Single-Event Effects