A System-level Method for Hardening Phase-Locked Loop to Single-Event Effects

Bin Liang,Xinyu Xu,Hengzhou Yuan,Jianjun Chen,Deng Luo,Yaqing Chi,Hanhan Sun
DOI: https://doi.org/10.1088/2053-1591/ac8f87
IF: 2.025
2022-09-06
Materials Research Express
Abstract:To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed. The phase margin of the PLL is kept at 58.16° due to the rational design and the output clock frequency ranges from 0.8 to 3.2 GHz. The circuit-level simulation results reveal that the sensitive volume of the hardened PLL decreases by 80% ~ 95%. The novel radiation-hardened PLL circuit was implemented in a 28 nm CMOS technology and irradiated with heavy ions with a linear energy transfer between 1.9 and 65.6 MeV•cm2/mg. The proposed radiation-hardened PLL shows one order of single-event effects hardness level higher than the conventional PLL.
materials science, multidisciplinary
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