Design of Charge Pump for High-Speed Phase-Locked Loop

温显光,解宁,何乐年,徐新民,孙振国
DOI: https://doi.org/10.3969/j.issn.1000-7180.2004.12.054
2004-01-01
Abstract:A novel structure of a charge pump for high-speed Phase-Locked Loop (PLL) is presented. The design is based on 0.25um CMOS mixed-signal process of TSMC. Positive feedback and supply-independent biasing are used to solve charge injection effect and to obtain faster switching speed. Simulation results show that the charge pump meets the need of 480 MHz PLL circuit entirely.
What problem does this paper attempt to address?