A High-Performance Charge Pump with Improved Static and Dynamic Matching Characteristic.

Haibin Shao,Ke Lin,Bo Wang,Chen,Fang Gao,Feng Huang,Xin'an Wang
DOI: https://doi.org/10.1109/asicon.2015.7517058
2015-01-01
Abstract:A high-performance Charge Pump (CP) is introduced in this paper with both perfect static and dynamic matching properties. Pseudo-cascode structure and bulk-biasing technique are adopted to obtain a high equivalent output impedance over a wide voltage range as well as a fast transient behavior. Besides, by analyzing turn-on and turn-off mechanisms, a MOS capacitor is inserted to weaken the coupling from current switch to reduce the conduction time and an extra discharging path is added to accelerate the turn-off speed. A prototype is implemented in SMIC 130nm CMOS process. The simulation results show that the maximum static mismatch is only 0.37% and the largest ripple on VCO control voltage is 1.97mV over process, temperature and supply voltage variable. The amount of reference spur is −73.1dBc in the PLL output signal while the conventional one's level is −52dBc.
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