Abstract:GaAsSb/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (SEPL) measurement. For the first time, we have simultaneously observed the PL, from both type I and type II transitions in GaAsSb/GaAs heterostructure in the SEPL. The two transitions exhibit different PL, behaviours under different excitation energy. As expected, the peak energy of type I emission remains constant in the whole excitation energy range we used, while type U transition shows a significant blue shift with increasing excitation energy. The observed blue shift is well explained in terms of electron-hole charge separation model at the interface. Time-resolved(TR) PL exhibits more type 11 characteristic of GaAsSb/GaAs QW. Moreover, the results of the excitation-power-dependent PL and TRPL provide more direct information on the type-II nature of the band alignment in GaAsSb/GaAs quantum-well structures. By combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of Q(v) = 1.145 and Q(v)(0) = 0. 76 in our samples, respectively.

Interband Luminescence and Absorption of GaNAs/GaAs Single-Quantum-well Structures

Optical Transitions In Ganas/Gaas Single Quantum Well

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Optical Study of Electronic States in Gaasn

Optical Properties and Exciton Localization in Ganas/Gaas

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

The Excitonic Properties and Temperature Behaviour of the Photoluminescence from GaAs-GaAlAs Multiple Quantum Well Structures

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Luminescent Properties of Gaasbi/Gaas Double Quantum Well Heterostructures

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well