Abstract:The broadening and optical parameters of TiO2/SiO2 transition layers depending on the ion energy have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Ellipstrometry Spectroscopy (ES) methods. The TiO2/SiO2 samples were irradiated by Xe+ ions with energies of 100, 150, 200 and 250 keV. The depth profiles of the elements determined by the RBS spectra show the structure and thickness of the TiO2/SiO2 transition layers before and after implantation. We have found that the thickness of the transition region between the TiO2 and SiO2 layers increases with the increasing incident ion energy. This phenomenon indicates an increasing amount of atomic mixing at the TiO2/SiO2 interface. In addition, the variation of transition layers could be explained by defect depth profiles and ions energy transferred in the mixed layers by means of SRIM calculations. The thickness obtained from the RBS is in good agreement with that measured using the ES method. Based on these obtained results, we have also investigated the optical constants of implanted and non-implanted TiO2/SiO2 structures. The wave forms measured with varying incident angles suggest that the measurements were made close to near the main principle point. The yields of \psi and \delta bands vary at different incident angles, is associated with interference processes of the light reflected from the structures examined. The refractive index and the extinction coefficient were found to increase after implantation taking place up to 200-keV Xe and then decrease at 250 keV.

Depth Distributions of Bi+ Ions Implanted into Ni, Si and SiO₂, Films

The Mean Projected Range and Range Straggling of Xe Ions Implanted in Si and Si1N1.375H0.603

Simulation of the Distribution of Incident Ions and Depth Profile in Plasma-Based Ion Implanted Layers with Different Pulse Width

Effect of plasma density on the distribution of incident ions and depth profile in plasma-based ion implanted layers

Burrowing Of Pt Nanoparticles Into Sio2 During Ion-Beam Irradiation

Study on Surface Morphology and Optical Absorption Properties of Ni Ions Implanting SiO2

High-Efficiency Near-Infrared Emission from Bismuth-Doped Sio0.73 Thin Films Fabricated by Ion Implantation Technology

High current Ni-ion implantation into Al films

Distributions of Implanted Fe Ions in Quartz Crystal and Silicon

Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery

Radiation effect on the photoluminescence properties of Si/SiO2 thin films

Research on dopant distribution of multi-energy boron implantations into c-SiC

Depth Profiling of Si Oxidation States in Si-Implanted SiO<sub>2</sub> Films by X-Ray Photoelectron Spectroscopy

Investigation of Intermixing and Phase Change of Ni/SiO_2 under Swift Heavy Ion Irradiation

Latent Tracks of Swift Bi Ions in Si3N4

Optical Properties of Metallic Nanoparticles in Ni-ion-implanted Α-Al2o3 Single Crystals

Investigation of Mn-implanted n-Si by low-energy ion beam deposition

Surface Morphology Of He-Implanted Single-Crystalline Silicon

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Variation of TiO2/SiO2 mixed layers induced by different Xe+ ion energies