Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Investigation of Intermixing and Phase Change of Ni/SiO_2 under Swift Heavy Ion Irradiation

Atomic Investigation on the Facet‐Dependent Melting of Ceramic Nanostructures Via in Situ Electron Irradiation

Role of Carrier Concentration in Swift Heavy Ion Irradiation Induced Surface Modifications

Effect of Ion Irradiation on the Formation of Ni, Cr and Pt Silicide

Ion Mixing and Demixing in the Au-Si System

Assessing thermal spike model of swift heavy ion-matter interaction via Pd$_{1-x}$Ni$_x$/Si interface mixing

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

Study of intense pulsed ion beam mixing with RBS

Effect Of Irradiation With Intense Pulsed Ion Beams On The Phase Evolution Of Ni3al Based Superalloy Ic6

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Irradiation Effects on the Interfacial Adhesion Between Ti Films and SiO2 Substrate

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Influences of the Irradiation of Intense Pulsed Ion Beam (IPIB) on the Surface of Ni₃Al Base Alloy IC6

First-principles Investigation on the Composition of Ni-Si Precipitates Formed in Irradiated Stainless Steels

Phase Evolution Upon Ion Mixing and Solid-State Reaction and Thermodynamic Interpretation in the Ni-Nb System

Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

Variation of TiO2/SiO2 mixed layers induced by different Xe+ ion energies

Study on intense pulsed ion beam mixing of Ni/Ti and Al/Ti systems

Characterization of microstructure and hardening of SiC ceramic brazed joint using TiZrCuNi filler irradiated by He ions