High-Efficiency Near-Infrared Emission from Bismuth-Doped Sio0.73 Thin Films Fabricated by Ion Implantation Technology

Shaobing Lin,Xiaowei Zhang,Pei Zhang,Dameng Tan,Jun Xu,Wei Li,Kunji Chen
DOI: https://doi.org/10.1364/ol.41.000630
IF: 3.6
2016-01-01
Optics Letters
Abstract:Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved sigma(em) x tau of up to 4.2 x 10(-23) cm(2) s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration. (C) 2016 Optical Society of America
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