Effect of Si doping on near-infrared emission and energy transfer of Bismuth in silicate glasses

Nengli Dai,Huaixun Luan,Bing Xu,Lvyun Yang,Yubang Sheng,Zijun Liu,Jinyan Li
DOI: https://doi.org/10.1016/j.jnoncrysol.2011.09.023
2012-01-01
Abstract:We have studied the effects of Si doping on the near infrared (NIR) luminescence observed in low Bi doped ( 0.1mol% ) glasses and the energy transfer from Yb3+ to Bi. The broadband near infrared can only be observed when Si is introduced in the Bi-doped glass. The origin of this fluorescence can be attributed to Bi ions at low valence. Efficient energy transfer from Yb3+ to Bi NIR active ions is achieved by co-doping of Si. There is an increment of about ~29 times of the emission intensity from Bi-related active center as the Yb3+ concentration varies from 0 to 2.0mol% and the amount of Si is 0.05mol% under 980nm excitation. The possible mechanism of energy transfer from Yb3+ to Bi is also discussed.
materials science, multidisciplinary, ceramics
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