Abstract:Bi-Doped photonic materials with broadband near infrared (NIR) photoemission have allowed rapid progress of new-generation fiber lasers and super-broadband optical amplifiers. Despite this, major challenges persist towards realizing super-broad and efficient Bi NIR emission covering the whole telecommunication window due to the complicated luminescence behavior, especially for glasses doped with a low Bi content. Here, via introducing nitride into glasses, we obtained super-broad and highly reinforced NIR emission in multi-component borogermanate glasses, which resulted from the generation of multiple Bi NIR-active centers. The spectral bandwidth exceeded approximate to 600 nm; this enabled Bi-activated glasses to cover the whole NIR region (850-1700 nm), which can hardly be realized by quantum-dot-doped glasses, rare earth-functionalized glasses or current Bi-doped multi-component photonic glasses. A detailed analysis of the spectra and tailoring of local glass structures revealed that the compact glass structure with the addition of antimony oxide and the bonding effect of nitrogen could contribute to significant increase in the Bi NIR emission intensity and decay lifetime. The newly generated Bi luminescent centers may have originated from the low-valence Bi effected by oxygen vacancies. These results will add new knowledge to the luminescence behaviors of Bi and may help solve the current limitations of Bi-doped glass and fiber materials. Moreover, the nitridation of materials may offer a way to fundamentally boost luminescence efficiency, especially for ultra-low activator content.

Broadband Near-Infrared Emission from Bismuth-Doped Multilayer Films

Sensitized Broadband Near-Infrared Luminescence from Bismuth-Doped Silicon-Rich Silica Films.

Ultra-broadband Infrared Luminescence of Bi-doped Thin-Films for Integrated Optics.

In Situ Instant Generation of an Ultrabroadband Near-Infrared Emission Center in Bismuth-Doped Borosilicate Glasses Via a Femtosecond Laser

Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices.

Enhanced and Wavelength-Tunable Near-Infrared Luminescence from Bismuth-Doped Silica Thin Films with Au Nanocrystals

Broadband L+ near-Infrared luminescence in Bismuth/Germanium co-doped silica glass prepared by the Sol-Gel method

Broadband Near-Infrared Emission from Bi/Cr Co-Doped Aluminosilicate Glasses

Luminescence properties of bismuth-doped lime silicate glasses

Generation of Emission Centers for Broadband Nir Luminescence in Bismuthate Glass by Femtosecond Laser Irradiation

New Strategy to Enhance the Broadband Near‐infrared Emission of Bismuth‐doped Laser Glasses

Broadband Infrared Luminescence of Bismuth-Doped Borosilicate Glasses

Broadband NIR Luminescence from a New Bismuth Doped Ba_2B_5O_9Cl Crystal: Evidence for the Bi^0 Model

Low-Temperature Growth of Near-Infrared Luminescent Bi-Doped Sioxny Thin Films

Stable Broadband Fiber-Coupled Near Infrared Light Sources Based on a Bismuth Heavily Doped Aluminosilicate Optical Fiber

Recent Advances in Super Broad Infrared Luminescence Bismuth-Doped Crystals

Formation of E-band luminescence-active centers in bismuth-doped silica fiber via atomic layer deposition

High-Efficiency Near-Infrared Emission from Bismuth-Doped Sio0.73 Thin Films Fabricated by Ion Implantation Technology

Broadband NIR emission from multiple Bi centers in nitridated borogermanate glasses via tailoring local glass structure

Broadband Infrared Luminescence from Li2O-Al2O3-ZnO-SiO2 Glasses Doped with Bi2O3.

Regulation of Bismuth Valence in Nano-Porous Silica Glass for Near Infrared Ultra-Wideband Optical Amplification