Material flow analysis (MFA) of an eco-economic system: a case study of Wujin District, Changzhou, China

Heping Huang,Jun Bi,Xiangmei Li,Bing-Chang Zhang,Jie Yang

DOI: https://doi.org/10.1007/s11515-008-0045-7

2008-03-07

Frontiers of Biology in China

Abstract:

What problem does this paper attempt to address?

Formation of E-band luminescence-active centers in bismuth-doped silica fiber via atomic layer deposition

Weiqi Wang,Yuanyuan Yang,Jianxiang Wen,Yanhua Dong,Cai Huang,Yanhua Luo,Yana Shang,Fufei Pang,Tingyun Wang,Caihong Huang

DOI: https://doi.org/10.1364/oe.512309

IF: 3.8

2024-02-28

Optics Express

Abstract:Weiqi Wang, Yuanyuan Yang, Jianxiang Wen, Yanhua Dong, Caihong Huang, Yanhua Luo, Yana Shang, Fufei Pang, Tingyun Wang In this study, a Si defect structure was added into the silica network in order to activate the bismuth and silica structure active center. ... [Opt. Express 32, 8723-8735 (2024)]

optics
Investigation on the Spectral Characteristics of Bismuth Doped Silica Fibers

Yanqing Qiu,Yonghang Shen

DOI: https://doi.org/10.1016/j.optmat.2008.03.019

IF: 3.754

2008-01-01

Optical Materials

Abstract:We investigated the fluorescence characteristics of the bismuth doped silica fibers with and without Al co-dopant which are fabricated by means of modified chemical vapour deposition (MCVD) technique. It was found that the bismuth and germanium codoped silica fiber exhibited a strong broad infrared emission centring at 1450nm and covering 1300nm when excited by the laser diodes working at 808nm and 976nm respectively. It was also found that for the Al and bismuth codoped silica fiber, the red (centring around 750nm) and the infrared fluorescence (centring around 1100nm) may originate from different emission centers in the fiber. Furthermore, strong up-conversion luminescence was also observed in both Al codoped and non-Al codoped bismuth doped fibers when the fibers were excited by an acoustic-optic Q-switched Nd:YVO4 laser. It is thus concluded that the upper energy level absorption reported in the work of the bismuth doped silica fiber lasers may result from the fluorescence emission sites not responsible for the infrared emission.
Fluorescence Emission Centres and the Corresponding Infrared Fluorescence Saturation in a Bismuth-Doped Silica Fibre

Qiu Yan-Qing,Shen Yong-Hang

DOI: https://doi.org/10.1088/0256-307x/25/7/054

2008-01-01

Abstract:We investigate the fluorescence characteristics of bismuth doped silica fibres with and without Al co-dopant which are fabricated by means of modified chemical vapour deposition (MCVD) technique, and find that the fluorescences in the red region (centred around 750nm) and in the infrared region (centred around 1100nm) may originate from different emission sites in the fibre. Strong upconversion phenomena are observed in both Al-codoped and non Al codoped bismuth fibres when the fibres are excited by an acoustic-optic Q-switched Nd:YVO4 laser. Both the aspects indicate that the upper energy level absorption reported in the work of the bismuth doped silica fibre lasers may result from the fluorescence emission sites that are not responsible for the infrared emission. It is thus expected that optimizing the compositions and the fabrication conditions of the fibre and then transferring more fluorescence emission centres are helpful for the infrared emission.
Sensitized Broadband Near-Infrared Luminescence from Bismuth-Doped Silicon-Rich Silica Films.

Yuji Miwa,Hong-Tao Sun,Kenji Imakita,Minoru Fujii,Yu Teng,Jianrong Qiu,Yoshio Sakka,Shinji Hayashi

DOI: https://doi.org/10.1364/ol.36.004221

2011-01-01

Abstract:Developing Si compatible optical sources has attracted a great deal of attention owing to the potential for forming inexpensive, monolithic Si-based integrated devices. In this Letter, we show that ultra broadband near-IR (NIR) luminescence in the optical telecommunication window of silica optical fibers was obtained for Bi-doped silicon-rich silica films prepared by a co-sputtering method. Without excess Si, i.e., Bi-doped pure silica films, no luminescence was observed in the NIR range. A broad Bi-related NIR photoluminescence appears when excess Si was doped in the Bi-doped silica. The luminescence properties depended strongly on the amount of excess Si and the annealing temperature. Photoluminescence results suggest that excess Si acts as an agent to activate Bi NIR luminescence centers and also as an energy donor to transfer excitation energy to the centers. It is believed that this peculiar structure might find some important applications in Si photonics.
Stable Broadband Fiber-Coupled Near Infrared Light Sources Based on a Bismuth Heavily Doped Aluminosilicate Optical Fiber

Kuen Yao Lau,Dongchen Zhang,Xiaofeng Liu,Luyun Yang,Jianrong Qiu

DOI: https://doi.org/10.1016/j.jlumin.2022.119436

IF: 3.6

2022-01-01

Journal of Luminescence

Abstract:Bismuth centers doped in glasses and crystals exhibit broadband near-infrared luminescence covering a spectral range from-1100 nm to-1800 nm, which could not be easily achieved with rare-earth ions. The luminescence between-1100 nm and 1250 nm of bismuth-doped aluminosilicate optical fibers depends on the concentration of Al3+ dopants and the bismuth active center. Nevertheless, conventional bismuth-doped aluminosilicate optical fiber fabricated by modified chemical vapour deposition exhibits strong quenching effect for near-infrared luminescence, which limits the optical gain per unit length for the optical fiber. As an alternative, using Bi-doped fiber preforms obtained from a nano-porous glass route, we have demonstrated the fabrication of bismuth-doped aluminosilicate optical fibers with Bi concentration of-5000 ppm without quenching. Here, we report a stable and reliable spontaneous emission spanning across 1070 nm-1250 nm with center wavelength of-1160 nm and 3-dB spectral bandwidth of-81 nm in this aluminosilicate bismuth-doped optical fiber. The spectral result could be promising for application in tunable and ultrafast fiber lasers.
Photoluminescence in Ga/Bi co-doped silica glass

Igor Razdobreev,Hicham El Hamzaoui,Vladimir B. Arion,Mohamed Bouazaoui

DOI: https://doi.org/10.1364/OE.22.005659

2013-05-15

Abstract:Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46-300 K. Based on the results of the continuous wave (CW) and time resolved spectroscopy we identify the centers emitting in the spectral region of 480-820 nm as Bi$^+$ ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi$^+$ ion, the second band is presumably associated to defects. We put in evidence the energy transfer between Bi$^+$ ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi$^+$ ion interacting with this defect.

Materials Science
Novel luminescence of bismuth in silica glass and fiber based on nanoporous glass

Dongchen Zhang,Weiquan Su,Luyun Yang,Wei Chen

DOI: https://doi.org/10.1016/j.ceramint.2022.06.013

IF: 5.532

2022-08-02

Ceramics International

Abstract:The ultra-broadband emission spectrum of Bi-doped fiber brings new hope for improving communication rate, while there are still many obstacles on the road to its full commercialization. The method of preparing Bi-doped fiber based on nanoporous silica glass (NPSG) is expected to be the key to breaking through the bottleneck of Bi-doped fiber. In this article, we conduct an in-depth study on the luminescence behavior and up-conversion of Bi in NPSG and its fabricated fibers. It was found that aluminum and germanium ions compete for Bi active centers (BACs) in glass, and more BAC-Al is formed when the aluminum-germanium ratio is increased, and more BAC-Ge is formed when the aluminum-germanium ratio is decreased. It is verified that the luminescence principle of bismuth originates from the defects in the glass. Bismuth up-conversion occurs in glasses which possess both BAC-Al and BAC-Ge. Bi-doped fibers were fabricated using the sleeve method, and excited-state absorption was found in the fibers. The energy level diagrams of BAC-Al and BAC-Ge are drawn. This work brings us one step to the near-infrared (NIR) luminescence principle of Bi, and lays a solid foundation for Bi-doped fiber amplifiers.

materials science, ceramics
Broadband L+ near-Infrared luminescence in Bismuth/Germanium co-doped silica glass prepared by the Sol-Gel method

Xin Li,Mengting Guo,Chongyun Shao,Jinming Tian,Fan Wang,Yinggang Chen,Yan Jiao,Chun Yu,Hu Li

DOI: https://doi.org/10.1039/d3tc03396a

IF: 6.4

2023-11-05

Journal of Materials Chemistry C

Abstract:Bismuth (Bi) and Germanium (Ge) co-doped silica glass and fiber, as a novel amplification medium, has attracted extensive attention due to its L+ near-infrared (NIR) luminescence to broaden the communication band. However, the underlying mechanism of bismuth NIR luminescence remains elusive, which posed a constraint on the development of Bi/Ge co-doped silica glass and fiber. In this study, the Bi/Ge co-doped silica glass was prepared by sol-gel method and the influence of Ge and Bi doping concentration on luminescence properties was systematically investigated. Through an analysis of glass network structure, it is found a direct correlation between bismuth near-infrared active luminescence centers (BAC) for L+ band emission and the germanium oxygen vacancy defects (Ge-ODC). A formation mechanism of BAC-Ge was proposed. This paper gives an understanding of bismuth NIR luminescence behavior, especially in the L+ band and serves as a valuable reference for the precise design of bismuth-doped silica fiber for L+ band amplifying application.

materials science, multidisciplinary,physics, applied
Broadband Near-Infrared Emission from Bismuth-Doped Multilayer Films

Satoshi Morimoto,Minoru Fujii,Hong-Tao Sun,Yuji Miwa,Kenji Imakita,Jianrong Qiu,Shinji Hayashi

DOI: https://doi.org/10.1063/1.4757579

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Multilayer structures consisting of bismuth (Bi)-doped silica thin films and different kinds of spacer, i.e., Si, silica, Si-rich silica, layers are grown and the luminescence properties are studied. When samples were annealed at a low temperature, Bi-related near infrared active centers (BRACs) were formed at interfaces between Bi-doped silica and Si-rich silica (or silicon) due to the reduction of Bi3+ to BRACs by silicon. On the other hand, films annealed at a high temperature showed similar emission behaviors to bulk glasses. The results demonstrated here establish a new strategy for the control of BRACs and building peculiar Bi activated film structures.
Bi-Yb co-doped ultra-broadband luminescent silica glass based on glass phase separation technology

Luyun Yang,Zichang Liu,Chen Luo,Dongchen Zhang

DOI: https://doi.org/10.1117/12.2672598

2023-04-10

Abstract:Broad-spectrum light sources are widely used in optical fiber sensing and spectral analysis. At present, the supercontinuum spectrum generated by photonic crystal fiber nonlinearity covers a wide range of wavelengths, while it is a challenge to make the spectral flat, especially in 1000-1200nm range. In comparison, ultra-broadband light sources generated by doped fibers have better flatness. Bi-doped glass and optical fibers have attracted much attention in the field of ultra-broadband light sources and optical amplifiers due to their ultra-broadband spontaneous emission. We prepared Bi-doped quartz glass by glass phase separation method, and synthesized Bi active center-Al (BAC-Al) in glass by controlling the valence state of Bi by sintering atmosphere, which possess luminescence at 1120nm. Yb and Bi were simultaneously incorporated into glass for achieving combined BAC-Al and Yb luminescence. The combined spectrum covers 1000-1250nm, and the half maximum full width can reach 150nm. Various properties of the glass are tested, and the luminescence of bismuth and ytterbium in the glass are studied. The energy transfer between Bi and Yb was discovered, which can help to infer the energy level of BAC-Al. This work not only provides new materials and methods for ultra-broadband light sources, but also provides new ideas for exploring the near-infrared luminescence principle of Bi.

Physics,Engineering,Materials Science
Generation of Emission Centers for Broadband Nir Luminescence in Bismuthate Glass by Femtosecond Laser Irradiation

Mingying Peng,Quanzhong Zhao,Jianrong Qiu,Lothar Wondraczek

DOI: https://doi.org/10.1111/j.1551-2916.2008.02909.x

IF: 4.186

2009-01-01

Journal of the American Ceramic Society

Abstract:Bismuth‐doped glasses have recently received significant interest as potential material for ultrabroadband optical amplification in the telecommunication spectral bands, as well as as gain material for fiber lasers. However, the nature of the active centers that are responsible for the observed near‐infrared (NIR) luminescence is still highly debated. In order to probe the mechanism that leads to NIR emission in bismuth‐containing glasses, femtosecond (fs) laser irradiation was used. It is shown that local absorption properties in the visible spectral range can be altered in initially transparent bismuthate glasses after fs laser irradiation. Induced absorption centers exhibit the well‐known broadband optical emission peaking at ∼1250 nm when excited with a 785 nm diode laser. Absorption and emission intensities increase with increasing average pulse energy. These observations are interpreted as a photo‐induced reduction reaction of Bi3+ to Bi+ species, while the previously discussed formation of Bi‐clusters by ion diffusion is excluded due to the very short interaction time that results from the use of fs laser. Bi+ species are, therefore, proposed as the major origin of NIR emission from Bi‐doped glasses.
Enhanced and Wavelength-Tunable Near-Infrared Luminescence from Bismuth-Doped Silica Thin Films with Au Nanocrystals

Xiaowei Zhang,Pengjun Wang,Dongfeng Qi,Yanyan Huang,Bolin Zheng,Tao Lin,Ping Chen,Zhongwei Yu,Jun Xu

DOI: https://doi.org/10.1016/j.jallcom.2018.09.086

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:Near-infrared (NIR) luminescence origin of Bi-doped amorphous silica thin film is elucidated by the XPS characterizations and selective photoluminescence (PL) measurements. The excitation wavelength-dependent NIR luminescence suggests the co-existence of two different types of Bi-related active centers, Bi-0 and Bi+, should contribute to the NIR PL emissions at 1150 nm and 1280 nm, respectively. A confined crystallization growth strategy is designed for fabricating the uniform-size Au nanocrystals (NCs) embedded in Bi-doped amorphous silica thin film. Via controls of the doping amounts of Au ions, the NIR PL emission of Bi ions in amorphous silica thin film can be wavelength-tunable and enhanced by nearly 300% on the optimum Au ions doping amount. Temperature-dependent PL emission spectra demonstrate parts of Au ions play a role of eliminating hydroxyl groups and give rise to greatly enhanced NIR PL emission intensity. We anticipate that both the greatly enhanced and wavelength-tunable PL emission and the discussion of NIR luminescence origin will shed light on future research of Bi-doped luminescent materials. (C) 2018 Elsevier B.V. All rights reserved.
Geometric and Optical Properties of Bi/Er Co-Doped Silica Optical Fiber

Gang Liu,Fugang Wang,Xiaoning Guan,Baonan Jia,Lihong Han,Binbin Yan,Gang-Ding Peng,Pengfei Lu

DOI: https://doi.org/10.1016/j.optmat.2020.110030

IF: 3.754

2020-01-01

Optical Materials

Abstract:Bi/Er co-doped silica optical fiber is investigated by using first-principle methods. Si-Bi-Er and Si-O-Bi-Er cluster models are constructed based on the interstitial Er-doped 6-membered ring (Int-Er-6MR) model for investigating the geometric and optical properties. The formation energy decreases with the increase of the Bi-Er bond length, and the Si-O-Bi-Er model is more stable than Si-Bi-Er model. Our results confirm that similar to 1270 nm luminescence originates from Bi+ ion and similar to 1530 nm luminescence stems from Er3+ ion. Besides, we discuss the possible energy transfer processes between Bi+ ion and Er3+ ion.
Excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass

Liaolin Zhang,Guoping Dong,Jingdong Wu,Mingying Peng,Jianrong Qiu

DOI: https://doi.org/10.1016/j.jallcom.2012.03.101

IF: 6.2

2012-01-01

Journal of Alloys and Compounds

Abstract:We report on excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass prepared by chemical vapor deposition technique. The peak position of the emission bands shows a complex change between 1120nm and 1270nm with increasing excitation wavelength from 280nm to 980nm. This behavior can be well explained by existence of two kinds of Bi active centers, Bi0 and Bi+, which contribute to the NIR emissions at 1120nm and 1267nm, respectively.
Luminescence of Bi3+ Ions and Energy-Transfer from Bi3+ Ions to Eu3+ Ions in Silica Glasses Prepared by the Sol-Gel Process

MQ WANG,XP FAN,GH XIONG

DOI: https://doi.org/10.1016/0022-3697(95)00008-9

IF: 4.383

1995-01-01

Journal of Physics and Chemistry of Solids

Abstract:Luminescence of Bi3+ ions and energy transfer from Bi3+ ions to Eu3+ ions in silica glasses prepared by the sol-gel process have been investigated. The results showed that the excitation band of Bi3+ ions corresponds to the 1S0 → 1P1 transition and emission spectra consists of a single broad band without structure centred at 395 nm, which corresponds to 3P1 → 1S0 transition. When a small amount of Bi3+ ions was introduced to 1 mol% Eu3+ ions the doped silica gel glass emission intensity of Eu3+ ions got significantly stronger, which suggests very efficient energy transfer from Bi3+ ions to Eu3+ ions. It can be assigned to significant energy overlap between the emission band of the Bi3+ ion and the excitation band of the Eu3+ ion. However, due to a larger energy overlap between emission and excitation bands of Bi3+, when Bi3+ ion concentration in silica gel glasses was more than 0.5 mol% the probability of energy transfer between Bi3+ ions increased rapidly and the probability of energy transfer from Bi3+ ions to Eu3+ ions decreased relatively. As a consequence, the sensitized effectiveness of the Bi3+ ion on the emission spectrum of the Eu3+ ion drastically decreased with increasing Bi3+ ion concentration.
Generation and increment of Bi active center in silicate glass based on glass phase separation technology

Dongchen Zhang,Shixing Chen,Chengxi Luo,Junming Huang,Luyun Yang

DOI: https://doi.org/10.1016/j.ceramint.2024.01.169

IF: 5.532

2024-04-01

Ceramics International

Abstract:The emergence of bismuth doped fiber fills the near-infrared low loss window of the entire quartz fiber with luminescent materials based on silicate matrix. However, the particularity of Bi ions makes it difficult to form Bismuth active center (BAC) and the threshold of its existent amount is very low in quartz glass. In this paper, mesoporous silicate glass was prepared using glass phase separation method, and its adsorption characteristics were studied. BAC effectively synthesized in mesoporous silicate glass by regulating the gas type and pressure. The fluorescence intensity of different BACs in glass has been significantly improved through gamma irradiation and heat treatment. The effects of different irradiation doses and heat treatment temperatures on different BACs were explored. The absorption spectrum of glass at short wavelengths after irradiation and heat treatment were tested, and the relationship between various defects in glass and BAC were analyzed, which indicating that the number of BACs can be increased by increasing the specific defects through irradiation and heat treatment. This work elucidates the formation mechanism of BAC and provides a stable and effective preparation method for quartz glass with BAC.

materials science, ceramics
Luminescence properties of bismuth-doped lime silicate glasses

Jinjun Ren,Jianrong Qiu,Danping Chen,Xiao Hu,Xiongwei Jiang,Congshan Zhu

DOI: https://doi.org/10.1016/j.jallcom.2007.09.026

IF: 6.2

2008-01-01

Journal of Alloys and Compounds

Abstract:Luminescences from bismuth-doped lime silicate glasses were investigated. Luminescences centered at about 400, 650, and 1300nm were observed, excited at 280, 532 and 808nm, respectively. These three luminescence bands arise from three different kinds of bismuth ions in the glasses. The visible luminescences centered at 400 and 650nm arise from Bi3+, and Bi2+, respectively. The infrared luminescences cover the wavelength range from 1000 to 1600nm when exited by an 808nm laser diode. The full width at half maximum (FWHM) of the infrared luminescences is more than 205nm. The intensity of the infrared luminescence decreases with the increment in CaO content. We suggest that the infrared luminescences might arise from Bi+. Such broadband luminescences indicate that the glasses may be potential candidate material for broadband fiber amplifiers and tunable lasers.
Bismuth-doped zinc aluminosilicate glasses and glass-ceramics with ultra-broadband infrared luminescence

Mingying Peng,Danping Chen,Jianrong Qiu,Xiongwei Jiang,Congshan Zhu

DOI: https://doi.org/10.1016/j.optmat.2005.08.049

IF: 3.754

2007-01-01

Optical Materials

Abstract:Broadband infrared luminescence covering the optical telecommunication wavelength region of O, E and S bands was observed from bismuth-doped zinc aluminosilicate glasses and glass-ceramics. The spectroscopic properties of the glasses and glass-ceramics depend on the thermal-treatment history. With the appearance of gahnite (ZnAl2O4) crystalline phase, the fluorescent peak moves to longer wavelength, but the fluorescent intensity decreases. The ∼1300nm fluorescence with a FWHM larger than 250nm and a lifetime longer than 600μs possesses these optical materials with potential applications in laser devices and broadband amplifiers. The broad infrared luminescence from the bismuth-doped zinc aluminosilicate glasses and glass-ceramics might be from BiO or bismuth clusters rather than from Bi5+ and Bi3+.
Ultra‐Broadband Emission in Bi/Ge Co‐Doped Silica Glass and Fiber via Bismuth Coordination Engineering

Xin Li,Jinmin Tian,Chongyun Shao,Mengting Guo,Yinggang Chen,Chunlei Yu,Lili Hu

DOI: https://doi.org/10.1002/adom.202402261

IF: 9

2024-10-16

Advanced Optical Materials

Abstract:Bi/Ge co‐doped silica glass and fiber, as advanced gain media with broadband NIR emission and amplification, hold great promise for extending communication bandwidth. Through coordination engineering, a luminescence peak at 1550 nm with a FWHM exceeding 350 nm is achieved. Additionally, an on‐off gain of over 5 dB is obtained in the range of 1400–1700 nm. Bismuth (Bi) and Germanium (Ge) co‐doped silica glass and fiber, as advanced gain media with broadband near‐infrared (NIR) emission and amplification, have promise for extending communication bandwidth. However, efficiently modulating the NIR emissions of bismuth to cover the C+L communication bands remain a significant challenge. In the study, a high‐temperature and high‐pressure reduction treatment on Bi/Ge co‐doped silica glass is employed to tailor the coordination environment around bismuth active center. This method facilitated the creation of new bismuth NIR luminescence centers, resulting in the luminescence spectrum with a peak position at 1550 nm and a FWHM exceeding 350 nm. The changes in the bismuth coordination environment are elucidated using HRTEM, photoluminescence decay, temperature‐dependent emission, EXAFS and CW‐EPR. Furthermore, the feasibility of this method in Bi/Ge co‐doped silica fiber is validated, and obtained >5 dB amplification in the range of 1400–1700 nm. This coordination engineering method holds significant potential for widespread application in Bi/Ge co‐doped silica glass and optical fiber is believed. It presents a promising prospect for expanding communication bandwidth by effectively modulating the NIR emissions of bismuth to cover the S to U communication band.

materials science, multidisciplinary,optics
Ultra-broadband Infrared Luminescence of Bi-doped Thin-Films for Integrated Optics.

Beibei Xu,Jianhua Hao,Shifeng Zhou,Jianrong Qiu

DOI: https://doi.org/10.1364/oe.21.018532

IF: 3.8

2013-01-01

Optics Express

Abstract:Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO(3), silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed.

Material flow analysis (MFA) of an eco-economic system: a case study of Wujin District, Changzhou, China

Formation of E-band luminescence-active centers in bismuth-doped silica fiber via atomic layer deposition

Investigation on the Spectral Characteristics of Bismuth Doped Silica Fibers

Fluorescence Emission Centres and the Corresponding Infrared Fluorescence Saturation in a Bismuth-Doped Silica Fibre

Sensitized Broadband Near-Infrared Luminescence from Bismuth-Doped Silicon-Rich Silica Films.

Stable Broadband Fiber-Coupled Near Infrared Light Sources Based on a Bismuth Heavily Doped Aluminosilicate Optical Fiber

Photoluminescence in Ga/Bi co-doped silica glass

Novel luminescence of bismuth in silica glass and fiber based on nanoporous glass

Broadband L+ near-Infrared luminescence in Bismuth/Germanium co-doped silica glass prepared by the Sol-Gel method

Broadband Near-Infrared Emission from Bismuth-Doped Multilayer Films

Bi-Yb co-doped ultra-broadband luminescent silica glass based on glass phase separation technology

Generation of Emission Centers for Broadband Nir Luminescence in Bismuthate Glass by Femtosecond Laser Irradiation

Enhanced and Wavelength-Tunable Near-Infrared Luminescence from Bismuth-Doped Silica Thin Films with Au Nanocrystals

Geometric and Optical Properties of Bi/Er Co-Doped Silica Optical Fiber

Excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass

Luminescence of Bi3+ Ions and Energy-Transfer from Bi3+ Ions to Eu3+ Ions in Silica Glasses Prepared by the Sol-Gel Process

Generation and increment of Bi active center in silicate glass based on glass phase separation technology

Luminescence properties of bismuth-doped lime silicate glasses

Bismuth-doped zinc aluminosilicate glasses and glass-ceramics with ultra-broadband infrared luminescence

Ultra‐Broadband Emission in Bi/Ge Co‐Doped Silica Glass and Fiber via Bismuth Coordination Engineering

Ultra-broadband Infrared Luminescence of Bi-doped Thin-Films for Integrated Optics.