Ultrabroadband Near-Infrared Luminescence and Efficient Energy Transfer in Bi and Bi/Ho Co-Doped Thin Films

Beibei Xu,Jianhua Hao,Qiangbing Guo,Juechen Wang,Gongxun Bai,Bin Fei,Shifeng Zhou,Jianrong Qiu
DOI: https://doi.org/10.1039/c3tc32177k
IF: 6.4
2014-01-01
Journal of Materials Chemistry C
Abstract:Ultrabroadband near-infrared luminescence in the 1.0-2.4 mu m range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband similar to 2 mu m luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.
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