Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Silicon Single Crystal Growth by Continuous Growth Method

Ultrafast growth of single-crystalline Si nanowires

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Diameter-Controlled Czochralski Growth of Silicon Crystals

Silicon Float Zone Single Crystal Automatic Growth

Silicon cylinder grown on the surface of a silicon wafer

Silicon Carbide: Progress in Crystal Growth

Crystal growth of ferroelectric PbTiO 3 nanocrystals on silicon substrate via intermediates

Continuous orientated growth of scaled single-crystal 2D monolayer films

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization

Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

Effect of Processing Parameters on Direct Fabrication of Polycrystalline Silicon Wafer

Nucleation and Growth of Polycrystalline SiC

Grain Growth Behaviors of Multicrystalline Silicon During Cold Crucible Continuous Casting

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth