Continuous orientated growth of scaled single-crystal 2D monolayer films

Ziyi Han,Lin Li,Fei Jiao,Gui Yu,Zhongming Wei,Dechao Geng,Wenping Hu

DOI: https://doi.org/10.1039/d1na00545f

IF: 5.598

2021-01-01

Nanoscale Advances

Abstract:Recent advances in growing scaled 2D single-crystal monolayer films by the chemical vapor deposition method are comprehensively presented.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Xiuju Song,Junfeng Gao,Yufeng Nie,Teng Gao,Jingyu Sun,Donglin Ma,Qiucheng Li,Yubin Chen,Chuanhong Jin,Alicja Bachmatiuk,Mark H. Rümmeli,Feng Ding,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-015-0816-9

IF: 9.9

2015-01-01

Nano Research

Abstract:Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 µm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.
Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Hua Yu,Mengzhou Liao,Wenjuan Zhao,Guodong Liu,X J Zhou,Zheng Wei,Xiaozhi Xu,Kaihui Liu,Zonghai Hu,Ke Deng,Shuyun Zhou,Jin-An Shi,Lin Gu,Cheng Shen,Tingting Zhang,Luojun Du,Li Xie,Jianqi Zhu,Wei Chen,Rong Yang,Dongxia Shi,Guangyu Zhang

DOI: https://doi.org/10.1021/acsnano.7b03819

IF: 17.1

2017-12-26

ACS Nano

Abstract:Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS2 films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.
Recent advances in controlled chemical vapor deposition growth of bilayer 2D single crystals

Ziyi Han,Ruijie Zhang,Menghan Li,Lin Li,Dechao Geng,Wenping Hu,ruijie Zhang

DOI: https://doi.org/10.1039/d2tc01095j

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Bilayer two-dimensional (2D) single crystals have attracted intense interests with unprecedented properties such as van Hove singularities, superconducting state and tunable bandgap, which are exceptionally beyond the existing monolayer 2D...

materials science, multidisciplinary,physics, applied
The Coalescence Behavior of Two-Dimensional Materials Revealed by Multiscale in Situ Imaging During Chemical Vapor Deposition Growth.

Zhu-Jun Wang,Jichen Dong,Linfei Li,Guocai Dong,Yi Cui,Yang,Wei,Raoul Blume,Qing Li,Li Wang,Xiaozhi Xu,Kaihui Liu,Cedric Barroo,Joost W. M. Frenken,Qiang Fu,Xinhe Bao,Robert Schloegl,Feng Ding,Marc-Georg Willinger

DOI: https://doi.org/10.1021/acsnano.9b08221

2021-01-01

Abstract:Wafer-scale monocrystalline two-dimensional (2D) materials can theoretically be grown by seamless coalescence of individual domains into a large single-crystal. Here we present a concise study of the coalescence behavior of crystalline 2D films using a combination of complementary in situ methods. Direct observation of overlayer growth from the atomic to the mm-scale and under model- and industrially relevant growth conditions reveals the influence of the film-substrate interaction on the crystallinity of the 2D film. In the case of weakly interacting substrates, the coalescence behavior is dictated by the inherent growth kinetics of the 2D film. It is shown that the merging of co-aligned domains leads to a distinct modification of the growth dynamics through the formation of fast-growing high-energy edges. The latter can be traced down to a reduced kink-creation energy at the interface between well-aligned domains. In the case of strongly interacting substrates, the lattice mismatch between film and substrate induces a pronounced Moiré corrugation that determines the growth and coalescence behavior. It furthermore imposes additional criteria for seamless coalescence and determines the structure of grain boundaries. The experimental findings, obtained here for the case of graphene, are confirmed by theory-based growth simulations and can be generalized to other 2D materials that show 3- or 6-fold symmetry. Based on the gained understanding of the relation between film-substrate interaction, shape evolution and coalescence behavior, conditions for seamless coalescence and thus, for the optimization of large-scale production of monocrystalline 2D materials, are established.
Chemical Vapor Deposition Growth of Scalable Monolayer Polycrystalline Graphene Films with Millimeter-Sized Domains

Shaoqian Yin,Xuewei Zhang,Chen Xu,Yang Wang,Yunlu Wang,Peifeng Li,Hongyan Sun,Miao Wang,Yang Xia,Cheng-Te Lin,Pei Zhao,Hongtao Wang

DOI: https://doi.org/10.1016/j.matlet.2017.12.121

IF: 3

2018-01-01

Materials Letters

Abstract:The preparation of scalable graphene films has attracted an enormous attention due to its industrial importance for graphene applications. Here we present a synthesis method of high-quality continuous monolayer graphene films with millimeter-sized domains on ordinary Cu substrates using oxygen-assisted chemical vapor deposition. This method demonstrates a significantly improvement to the resultant graphene such as a largely decreased nucleation density from similar to 10(6) to similar to 10(1) nuclei/cm(2), an increased average domain size from similar to 0.004 to similar to 1.5 mm and a film coverage from 64% to 100%. We attributed the success of this growth to the surface layer formed by bonded oxygen in Cu, which provides a higher priority for catalyzing the nucleation and growth of graphene domains. (C) 2018 Elsevier B.V. All rights reserved.
Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Yixuan Fan,Lin Li,Gui Yu,Dechao Geng,Xiaotao Zhang,Wenping Hu

DOI: https://doi.org/10.1002/adma.202003956

IF: 29.4

2020-11-16

Advanced Materials

Abstract:Large‐scale and high‐quality 2D materials have been an emerging and promising choice for use in modern chemistry and physics owing to their fascinating property profile. The past few years have witnessed inspiringly progressing development in controlled fabrication of large‐sized and single‐crystal 2D materials. Among those production methods, chemical vapor deposition (CVD) has drawn the most attention because of its fine control over size and quality of 2D materials by modulating the growth conditions. Meanwhile, Cu has been widely accepted as the most popular catalyst due to its significant merit in growing monolayer 2D materials in the CVD process. Herein, very recent advances in preparing large‐sized 2D single crystals on Cu substrates by CVD are presented. First, the unique features of Cu will be given in terms of ultralow precursor solubility and feasible surface engineering. Then, scaled growth of graphene and hexagonal boron nitride (h‐BN) crystals on Cu substrates is demonstrated, wherein different kinds of Cu surfaces have been employed. Furthermore, the growth mechanism for the growth of 2D single crystals is exhibited, offering a guideline to elucidate the in‐depth growth dynamics and kinetics. Finally, relevant issues for industrial‐scale mass production of 2D single crystals are discussed and a promising future is expected.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Deyi Fu,Xiaoxu Zhao,Yu-Yang Zhang,Linjun Li,Hai Xu,A-Rang Jang,Seong In Yoon,Peng Song,Sock Mui Poh,Tianhua Ren,Zijing Ding,Wei Fu,Tae Joo Shin,Hyeon Suk Shin,Sokrates T. Pantelides,Wu Zhou,Kian Ping Loh

DOI: https://doi.org/10.1021/jacs.7b05131

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0 aligned and 60 degrees antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60 degrees antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.
Controlled Growth of Single‐Crystal Graphene Films

Jincan Zhang,Li Lin,Kaicheng Jia,Luzhao Sun,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1002/adma.201903266

IF: 29.4

2019-01-01

Advanced Materials

Abstract:Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high‐end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain‐boundary‐free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single‐seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single‐crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large‐area single‐crystal graphene films are discussed.
Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Jianyi Chen,Xiaoxu Zhao,Sherman Jun Rong Tan,Hai Xu,Bo Wu,Bo Liu,Deyi Fu,Wei Fu,Dechao Geng,Yanpeng Liu,Wei Liu,Wei Tang,Linjun Li,Wu Zhou,Tze Chien Sum,Kian Ping Loh

DOI: https://doi.org/10.1021/jacs.6b12156

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:We report the fast growth of high-quality millimeter-size monolayer MoSe2 crystals on molten glass using an ambient pressure CVD system. We found that the isotropic surface of molten glass suppresses nucleation events and greatly improves the growth of large crystalline domains. Triangular monolayer MoSe2 crystals with sizes reaching 2.5 mm, and with a room-temperature carrier mobility up to 95 cm2(/)(V.s), can be synthesized in 5 min. The method can also be used to synthesize millimeter-size monolayer MoS2 crystals. Our results demonstrate that "liquid-state" glass is a highly promising substrate for the low-cost growth of high-quality large-size 2D transition metal dichalcogenides (TMDs).
On Water Growth of Continuous Thin Films of Two‐Dimensional Covalent Organic Frameworks with Large Single‐Crystal Domains

Zihao Liang,Baokun Liang,Li Gong,Yonghang Yang,Fengpiao Deng,Xinyu Wang,Yuanjun Xia,Zhipeng Zhou,Xin Dong,Jiaxing Lu,Wei Liu,Zhongke Yuan,Haoyuan Qi,Zhikun Zheng

DOI: https://doi.org/10.1002/cjoc.202300215

IF: 5.56

2023-05-22

Chinese Journal of Chemistry

Abstract:Comprehensive Summary A core feature of two‐dimensional covalent organic frameworks is crystallinity, but it remains challenging to gain their thin films with high crystallinity. Here, we presented growth of thin films of two‐dimensional covalent organic frameworks with an average domain size of ~ 2.83 μm2 and maximum domain size of up to ~ 26.19 μm2 using amphiphilic glycine derivatives on water surface. We envisage that this work will inspire the growth of a wide variety of organic two‐dimensional materials with high crystallinity and boost their structure property investigations. This article is protected by copyright. All rights reserved.

chemistry, multidisciplinary
Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Shengxue Zhou,Lina Liu,Shuang Cui,Xiaofan Ping,Dake Hu,Liying Jiao

DOI: https://doi.org/10.1007/s12274-020-2859-9

IF: 9.9

2020-06-09

Nano Research

Abstract:Two-dimensional (2D) tungsten disulfide (WS2) has emerged as a promising ultrathin semiconductor for building high-performance nanoelectronic devices. The controllable synthesis of WS2 monolayers (1L) with both large size and high quality remains as a challenge. Here, we developed a new approach for the chemical vapor deposition (CVD) growth of WS2 monolayers by using K2WS4 as the growth precursor. The simple chemistry involved in our approach allowed for improved controllability and a fast growth rate of 30 μm·min−1. We achieved the reliable growth of 1L WS2 flakes with side lengths of up to 500 μm and the obtained WS2 flakes were 2D single crystals with low density of defects over a large area as evidenced by various spectroscopic and microscopic characterizations. In addition, the large 1L WS2 single crystals we obtained showed higher electrical performance than their counterparts grown with previous approaches, demonstrating the potential of our approach in producing high quality and large 2D semiconductors for future nanoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Jin-Hong Park,Gwangwe Yoo,Jaeho Jeon,S. Jang,S. Jeon,Sungjoo Lee

DOI: https://doi.org/10.1109/TNANO.2014.2381667

2015-03-01

IEEE Transactions on Nanotechnology

Abstract:We report that control over the grain size and lateral growth of monolayer MoS2 film, yielding a uniform large-area monolayer MoS2 film, can be achieved by submitting the SiO2 surfaces of the substrates to oxygen plasma treatment and modulating substrate temperature in chemical vapor deposition (CVD) process. Scanning electron microscopy and atomic force microscopy images and Raman spectra revealed that the MoS2 lateral growth could be controlled by the surface treatment conditions and process temperatures. Moreover, the obtained monolayer MoS2 films showed excellent scalable uniformity covering a centimeter-scale SiO2 /Si substrates, which was confirmed with Raman and photoluminescence mapping studies. Transmission electron microscopy measurements revealed that the MoS2 film of the monolayer was largely single crystalline in nature. Back-gate field effect transistors based on a CVD-grown uniform monolayer MoS2 film showed a good current on/off ratio of ~106 and a field effect mobility of 7.23 cm2/V·s. Our new approach to growing MoS2 films is anticipated to advance studies of MoS2 or other transition metal dichalcogenide material growth mechanisms and to facilitate the mass production of uniform high-quality MoS2 films for the commercialization of a variety of applications.

Physics,Engineering,Materials Science
Fluid Guided CVD Growth for Large-scale Monolayer Two-dimensional Materials

Dong Zhou,Ji Lang,Nicholas Yoob,Raymond R. Unocic,Qianhong Wu,Bo Li

DOI: https://doi.org/10.1021/acsami.0c04125

2020-05-06

Abstract:Atmospheric pressure chemical vapor deposition (APCVD) has been used extensively for synthesizing two-dimensional (2D) materials, due to its low cost and promise for high-quality monolayer crystal synthesis. However, the understanding of the reaction mechanism and the key parameters affecting the APCVD processes is still in its embryonic stage. Hence, the scalability of the APCVD method in achieving large scale continuous film remains very poor. Here, we use MoSe2 as a model system and present a fluid guided growth strategy for understanding and controlling the growth of 2D materials. Through the integration of experiment and computational fluid dynamics (CFD) analysis in the full-reactor scale, we identified three key parameters: precursor mixing, fluid velocity and shear stress, which play a critical role in the APCVD process. By modifying the geometry of the growth setup, to enhance precursor mixing and decrease nearby velocity shear rate and adjusting flow direction, we have successfully obtained inch-scale monolayer MoSe2. This unprecedented success of achieving scalable 2D materials through fluidic design lays the foundation for designing new CVD systems to achieve the scalable synthesis of nanomaterials.

Applied Physics,Materials Science
Silicon Single Crystal Growth by Continuous Growth Method

Jiecai Han,S.H. Lee,Keun Ho Orr

1994-01-01

Journal of the Korean Crystal Growth and Crystal Technology

Abstract:Silicon single crystals were continuously grown by a modified process. Polycrystalline silicon powder was fed from the top reservoir to the growth chamber. Silicon single crystals were grown from the botton of the growth chamber. The balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed was the one of the main factors to control the diameter of crystals grown and quality, etc.
Growth of 2D Materials at the Wafer Scale

Xiangming Xu,Tianchao Guo,Hyunho Kim,Mrinal K. Hota,Rajeh S. Alsaadi,Mario Lanza,Xixiang Zhang,Husam N. Alshareef

DOI: https://doi.org/10.1002/adma.202108258

IF: 29.4

2022-02-23

Advanced Materials

Abstract:Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Designed Growth of Large‐Size 2D Single Crystals

Can Liu,Li Wang,Jiajie Qi,Kaihui Liu

DOI: https://doi.org/10.1002/adma.202000046

IF: 29.4

2020-01-01

Advanced Materials

Abstract:In the "post-Moore's Law" era, new materials are highly expected to bring next revolutionary technologies in electronics and optoelectronics, wherein 2D materials are considered as very promising candidates beyond bulk materials due to their superiorities of atomic thickness, excellent properties, full components, and the compatibility with the processing technologies of traditional complementary metal-oxide semiconductors, enabling great potential in fabrication of logic, storage, optoelectronic, and photonic 2D devices with better performances than state-of-the-art ones. Toward the massive applications of highly integrated 2D devices, large-size 2D single crystals are a prerequisite for the ultimate quality of materials and extreme uniformity of properties. However, at present, it is still very challenging to grow all 2D single crystals into the wafer scale. Therefore, a systematic understanding for controlled growth of various 2D single crystals needs to be further established. Here, four key aspects are reviewed, i.e., nucleation control, growth promotion, surface engineering, and phase control, which are expected to be controllable at different periods during the growth. In addition, the perspectives on designed growth and potential applications are discussed for showing the bright future of these advanced material systems of 2D single crystals.
Wafer Scale Growth of Single Crystalline Two-Dimensional van der Waals Materials

Chetna Gautam,Baishali Thakurta,Monalisa Pal,Anup K. Ghosh,Anupam Giri

DOI: https://doi.org/10.1039/d3nr06678a

IF: 6.7

2024-02-23

Nanoscale

Abstract:Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystalline atomically thin highly uniform films are indispensable. In this mini-review, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
A minireview on chemical vapor deposition growth of wafer-scale monolayer h -BN single crystals

Lin Li,Ye Zhang,Ruijie Zhang,Ziyi Han,Huanli Dong,Gui Yu,Dechao Geng,Hui Ying Yang

DOI: https://doi.org/10.1039/d1nr04034k

IF: 6.7

2021-01-01

Nanoscale

Abstract:Recent academic breakthroughs in chemical vapor deposition (CVD) deposited h -BN are presented. The techniques, catalysts, and mechanisms are fully studied. The great advances in expanding the size of h -BN single crystals will largely push forward the way to h -BN.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Growth and applications of two-dimensional single crystals

Zhibin Zhang,Stiven Forti,Wanqing Meng,Sergio Pezzini,Zehua Hu,Camilla Coletti,Xinran Wang,Kaihui Liu

DOI: https://doi.org/10.1088/2053-1583/acc95a

IF: 6.861

2023-04-02

2D Materials

Abstract:Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field.

materials science, multidisciplinary

Continuous orientated growth of scaled single-crystal 2D monolayer films

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Recent advances in controlled chemical vapor deposition growth of bilayer 2D single crystals

The Coalescence Behavior of Two-Dimensional Materials Revealed by Multiscale in Situ Imaging During Chemical Vapor Deposition Growth.

Chemical Vapor Deposition Growth of Scalable Monolayer Polycrystalline Graphene Films with Millimeter-Sized Domains

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Controlled Growth of Single‐Crystal Graphene Films

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

On Water Growth of Continuous Thin Films of Two‐Dimensional Covalent Organic Frameworks with Large Single‐Crystal Domains

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Fluid Guided CVD Growth for Large-scale Monolayer Two-dimensional Materials

Silicon Single Crystal Growth by Continuous Growth Method

Growth of 2D Materials at the Wafer Scale

Designed Growth of Large‐Size 2D Single Crystals

Wafer Scale Growth of Single Crystalline Two-Dimensional van der Waals Materials

A minireview on chemical vapor deposition growth of wafer-scale monolayer h -BN single crystals

Growth and applications of two-dimensional single crystals