Abstract:Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore's law of the number of transistors in an integrated circuit<a href="/articles/s41586-020-2009-2#ref-CR1">1</a>. One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering<a href="/articles/s41586-020-2009-2#ref-CR2">2</a>,<a href="/articles/s41586-020-2009-2#ref-CR3">3</a>. Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces<a href="/articles/s41586-020-2009-2#ref-CR4">4</a> or bulk copper foils<a href="/articles/s41586-020-2009-2#ref-CR5">5</a>. However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films<a href="/articles/s41586-020-2009-2#ref-CR6">6</a>,<a href="/articles/s41586-020-2009-2#ref-CR7">7</a>. Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)<a href="/articles/s41586-020-2009-2#ref-CR5">5</a>,<a href="/articles/s41586-020-2009-2#ref-CR8">8</a> is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.

A minireview on chemical vapor deposition growth of wafer-scale monolayer h -BN single crystals

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Recent advances in controlled chemical vapor deposition growth of bilayer 2D single crystals

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Towards the growth of single-crystal boron nitride monolayer on Cu

Synthesis of Multilayered h-BN Film on the Molten Ni-B and the Influence of Underneath W Substrate

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Recent Progress in the Tailored Growth of Two-Dimensional Hexagonal Boron Nitride Via Chemical Vapour Deposition.

Growth and Etching of Monolayer Hexagonal Boron Nitride

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

A Comprehensive Investigation on CVD Growth Thermokinetics of H-Bn White Graphene

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

Hexagonal boron nitride: a review on selfstanding crystals synthesis towards 2D nanosheets

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates