Abstract:Oxygen is the major impurity in single-crystal silicon rod derived from the growth of large-diameter n-type Czochralski (Cz) silicon, which could exert severe affects on the cell efficiency of monocrystalline silicon wafer. Reducing the concentration of oxygen in the silicon crystal could significantly improve the wafer cell efficiency. In the current work, a 2D global quasi-steady-state axisymmetric model was established based on the n-type 252 mm diameter single-crystal silicon growth process. Moreover, the effect of different heater structures on the concentration of oxygen in the hot zone, the crystal and the melt of the Cz furnace was investigated by the finite element method (FVM). It was found that the heater power was decreased by 2.22 kW after increasing the heater height from 210 mm to 300 mm. However, the average temperature of the quartz crucible was increased by 4.72 K, which contributes to the increase in the concentration of oxygen in the center of the wafer at the head of the single crystal silicon rod by 0.39 ppma. This demonstrates that increasing the heater height facilitates the reduction of the heater power consumption, but increases the oxygen concentration in the center of the wafer at the head of the monocrystalline silicon rods. The method of reducing the radiating area of the heater by increasing the slot depth was employed to reduce the heater power by 1.07 kW when adopting a heater structure with a height of 260 mm, an upper slot depth of 200 mm, and a bottom slot depth of 200 mm. The oxygen concentration of silicon wafers, which was detected by Fourier transform infrared spectroscopy, demonstrates that the oxygen concentration in the center of the head wafer was reduced by 1.324 ppma, and the average oxygen concentration of the head wafers reduced by 0.66 ppma. This study provides a theoretical basis for the design of oxygen-reducing heaters, which could be applied for the production of M10-size monocrystalline silicon wafers.

Effect of Heater Structure on Oxygen Concentration in Large Diameter N-Type Czochralski Silicon Study Using Numerical Simulation

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Study on Oxygen Control of Large Diameter N-type Monocrystalline Silicon with Large Thermal Field

Effects of Melt Depth on Oxygen Transport in Silicon Crystal Growth by Continuous-Feeding Czochralski Method

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

A novel approach to reduce the oxygen content in Monocrystalline silicon by Czochralski method

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon