Abstract:The scalability of surface electrode ion traps has been progressively improved with the on-chip integration of conventional bulk components. Based on the development of through-silicon-via (TSV)-integrated ion trap, in this work, we further simplify the back-end assembly process by patterning a redistribution layer (RDL) onto a customized ceramic pin grid array (C-CPGA) package. This RDL has an internal connection with a CPGA pin on the back side, rerouting the electrical signal and facilitating the direct bonding of the TSV trap and CPGA. The patterned neighboring RDL has an averaged resistance of $4.5\times 10^{12}\,\Omega $ , three orders of magnitude higher than that of the TSV trap itself. As compared to the previous assembly (glass interposer wire bonded to a conventional CPGA), a small parasitic capacitance increase of 0.1 pF of the C-CPGA is observed. Radio frequency (RF) electrical tests indicate that the trap on C-CPGA will not induce additional power loss. Meanwhile, due to the high thermal conductivity of ceramic materials, the heat dissipation capability of C-CPGA is boosted. The functionality of the TSV trap on C-CPGA is also demonstrated by trapping and laser cooling the 88Sr $^{+}$ ions. The measured heating rate (21 quanta per millisecond for an axial frequency of 300 kHz) is comparable with the trap assembled in the previous approach. This indicates that the CPGA with built-in RDL is fully compatible with ion trapping applications, providing a new approach toward compact, flexible, and robust ion trap assembly.

Ceramic Pin Grid Array with Built-in Interconnects to Locate TSV Integrated Ion Trap for Wire Bonding-free Assembly

Simplified Assembly of Through-Silicon-Via Integrated Ion Traps

Glass Substrate Interposer for TSV-integrated Surface Electrode Ion Trap

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Design, Fabrication and Characterization of Surface Electrode Ion Trap Integrated with TSV

Design Considerations and Fabrication Challenges of Surface Electrode Ion Trap with TSV Integration

Heterogenous Integration of Silicon Ion Trap and Glass Interposer for Scalable Quantum Computing Enabled by TSV, Micro-bumps and RDL

Layout Optimization of Integrated Inductors and Capacitors Using TGV Technology

TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

Heating Dissipation Discussion of TSV-integrated Ion Trap with Glass Interposer

Implementation of Air-Gap Through-Silicon-Vias (TSVs) Using Sacrificial Technology

The Integration of Grounding Plane into TSV Integrated Ion Trap for Efficient Thermal Management in Large Scale Quantum Computing Device

Interposer Fabrication with Annular Copper Tsv and Multi-Layered Redistribution Layer

Development of a BGA Package Based on Si Interposer with Through Silicon Via

Fabrication and Characterizations of A Low-Warpage Interposer Embedded with Polyimide-liner TSVs for SIP Applications

RF Performance Benchmarking of TSV Integrated Surface Electrode Ion Trap for Quantum Computing

Fabrication and Electrical Characteristics of a Novel Interposer with Polymer Liner and Silicon Pillars with Ultra-Low-resistivity As Through-Silicon-vias (tsvs) for 2.5D/3D Applications

Electrical characteristics of a novel interposer technique using ultra-low-resistivity silicon-pillars with polymer insulation as TSVs

Design and Development of Single-Qubit Ion Trap on Glass and Si Substrates with RF Analysis and Performance Benchmarking

Thermal Performance of 2.5D Packaging with the Through Glass Via (TGV) Interposer

Modeling of the RF Coaxial TSV Configuration Inside the Silicon Interposer with Embedded Cooling Cavity